Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters.

The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additionally, we fabricated rubrene thin-film transistors with pristine and irradiated rubrene, and discovered that the decrease in transistor properties originated from the irradiation of rubrene and that the threshold voltages are shifted to the opposite directions as the irradiated layers.

In situ patterning of high-quality crystalline rubrene thin films for high-resolution patterned organic field-effect transistors.

For the realization of high-performance patterned organic field-effect transistors (OFETs), we present a novel approach to fabricate patterned crystalline rubrene thin films by combining an abrupt heating technique and a lift-off process. Crystallization of rubrene thin films and the patterning of the films are accomplished almost simultaneously and in situ by this approach. Consequently, patterned rubrene crystalline films are remarkably rapidly produced within 2 min.