The characteristic of strongly correlated materials is the Mott transition between metal and insulator (MIT or IMT) in the same crystalline structure, indicating the presence of a gap formed by the Coulomb interaction between carriers. The physics of the transition needs to be revealed. Using VO, as a model material, we observe the emergence of a metallic chain in the intermediate insulating monoclinic structure (M2 phase) of epitaxial strained films, proving the Mott transition involving the breakdown of the critical Coulomb interaction.
View Article and Find Full Text PDFWe report surface plasmon (SP) lasing in metal/semiconductor nanostructures, where one-dimensional periodic silver slit gratings are placed on top of an InGaAsP layer. The SP nature of the lasing is confirmed from the emission wavelength governed by the grating period, polarization analysis, spatial coherence, and comparison with the linear transmission. The excellent performance of the device as an SP source is demonstrated by its tunable emission in the 400-nm-wide telecom wavelength band at room temperature.
View Article and Find Full Text PDFWe report the observation of coherent lattice vibrations in mono- and few-layer WSe2 in the time domain, which were obtained by performing time-resolved transmission measurements. Upon the excitation of ultrashort pulses with the energy resonant to that of A excitons, coherent oscillations of the A1g optical phonon and longitudinal acoustic phonon at the M point of the Brillouin zone (LA(M)) were impulsively generated in monolayer WSe2. In multilayer WSe2 flakes, the interlayer breathing mode (B1) is found to be sensitive to the number of layers, demonstrating its usefulness in characterizing layered transition metal dichalcogenide materials.
View Article and Find Full Text PDFWe demonstrate strong modulation of the transmission around the surface plasmon polariton (SPP) resonance in metal/semiconductor hybrid nanostructures based on Ag film on top of InGaAs. The change in the real and imaginary parts of the refractive index due to photoexcited carriers in InGaAs generates a shift in the SPP resonance and enhanced transmission near the SPP resonance. Temporal evolution of the complex refractive index was traced by comparing the transient transmission with finite-difference time-domain (FDTD) simulations.
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