Publications by authors named "Hwan Gi Lee"
Article Synopsis
- This paper introduces a new method for extracting source and drain series resistances in silicon nanowire MOSFETs using small-signal radio-frequency analysis.
- The method works for devices with both finite off-state resistance and gate bias-dependent on-state resistance, utilizing 3-D device simulations.
- The accuracy of this new extraction technique is confirmed through comparisons with existing methods and Z22- and Y-parameter measurements at frequencies up to 100 GHz.
Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature.
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