An Ultrasensitive Silicon Photonic Ion Sensor Enabled by 2D Plasmonic Molybdenum Oxide.

Silicon photonics has demonstrated great potential in ultrasensitive biochemical sensing. However, it is challenging for such sensors to detect small ions which are also of great importance in many biochemical processes. A silicon photonic ion sensor enabled by an ionic dopant-driven plasmonic material is introduced here.

Transparent amorphous strontium titanate resistive memories with transient photo-response.

Transparent non-volatile memory devices are desirable for realizing visually-clear integrated systems for information storage. Optical transparency provides advantages in applications such as smart glass electronic devices and wearable electronics. However, achieving high transparency limits the choice of active layers as well as the electrodes; thereby, constraining device processing and performance.

Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO memristors.

Donor doping of perovskite oxides has emerged as an attractive technique to create high performance and low energy non-volatile analog memories. Here, we examine the origins of improved switching performance and stable multi-state resistive switching in Nb-doped oxygen-deficient amorphous SrTiO (Nb:a-STO ) metal-insulator-metal (MIM) devices. We probe the impact of substitutional dopants (i.

Stretchable and Tunable Microtectonic ZnO-Based Sensors and Photonics.

The concept of realizing electronic applications on elastically stretchable "skins" that conform to irregularly shaped surfaces is revolutionizing fundamental research into mechanics and materials that can enable high performance stretchable devices. The ability to operate electronic devices under various mechanically stressed states can provide a set of unique functionalities that are beyond the capabilities of conventional rigid electronics. Here, a distinctive microtectonic effect enabled oxygen-deficient, nanopatterned zinc oxide (ZnO) thin films on an elastomeric substrate are introduced to realize large area, stretchable, transparent, and ultraportable sensors.

Elemental analogues of graphene: silicene, germanene, stanene, and phosphorene.

The fascinating electronic and optoelectronic properties of free-standing graphene has led to the exploration of alternative two-dimensional materials that can be easily integrated with current generation of electronic technologies. In contrast to 2D oxide and dichalcogenides, elemental 2D analogues of graphene, which include monolayer silicon (silicene), are fast emerging as promising alternatives, with predictions of high degree of integration with existing technologies. This article reviews this emerging class of 2D elemental materials - silicene, germanene, stanene, and phosphorene--with emphasis on fundamental properties and synthesis techniques.

Reduced impurity-driven defect states in anodized nanoporous Nb2O5: the possibility of improving performance of photoanodes.

Anodized nanoporous Nb2O5 films are synthesized using two different types of electrolyte compositions onto transparent conductive glasses and their impurities induced during the anodization process are assessed. These films are incorporated as photoanodes in dye sensitized solar cells (DSSCs). The one with no traces of impurity-driven defects exhibits higher current density and longer electron lifetimes, and consequently, an improvement in photoconversion efficiencies compared to the one that contains impurities.