Publications by authors named "Hung N Vu"

Telepharmacy is receiving significant attention as an innovative approach. The objective of this study is to assess the needs and evaluate the impact of telepharmacy applications in drug consultations at Thu Duc City Hospital. We used a cross-sectional research design and conducted a survey with the participation of leaders of the Faculty of Pharmacy, clinical pharmacists, dispensing pharmacists, and patients or their caregivers who receive medication at the Pharmacy of Thu Duc Hospital.

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Future pulsed-power electronic systems based on dielectric capacitors require the use of environment-friendly materials with high energy-storage performance that can operate efficiently and reliably in harsh environments. Here, a study of multilayer structures, combining paraelectric-like BaSrTiO (BST) with relaxor-ferroelectric BaZrTiO (BZT) layers on SrTiO-buffered Si substrates, with the goal to optimize the high energy-storage performance is presented. The energy-storage properties of various stackings are investigated and an extremely large maximum recoverable energy storage density of ≈165.

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The dielectric properties, tunability and figure-of-merit () of relaxor PbLa(ZrTi)O (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (-2%) in a wide-frequency range (10 kHz-1 MHz); meanwhile, the value decreases significantly (-17%) with increasing frequency, arising from the higher dielectric loss value.

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We report a top-down method for fabricating ultra-high aspect ratio single-crystal silicon nanowires. The fabrication method is based on the standard photolithography technique and anisotropic wet etching of the single-crystal silicon in KOH solution. SiO₂ mask nanolines used for patterning single-crystal silicon nanowires are formed by the undercut etching of thin SiO₂ layer in buffered hydrofluoric solution.

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