Continuous Synthesis of Highly Stable CsPbBr Perovskite Microcrystals by a Microfluidic System and Their Application in White-Light-Emitting Diodes.

In this paper, we report a simple, rapid, and stable method for the continuous synthesis of highly stable CsPbBr perovskite microcrystals (MCs) using a microfluidic system. To demonstrate the potential application of CsPbBr MCs, the sample was fabricated with KSiF:Mn phosphor onto InGaN blue chips as white-light-emitting diodes (LEDs). Our white-LED device achieved a high National Television Standards Committee value of 119% for backlight display, which indicated that the CsPbBr MC is a promising material for future applications.

Perovskite Quantum Dots and Their Application in Light-Emitting Diodes.

Perovskite quantum dots (PQDs) attract significant interest in recent years because of their unique optical properties, such as tunable wavelength, narrow emission, and high photoluminescence quantum efficiency (PLQY). Recent studies report new types of formamidinium (FA) PbBr PQDs, PQDs with organic-inorganic mixed cations, divalent cation doped colloidal CsPb M Br PQDs (M = Sn , Cd , Zn , Mn ) featuring partial cation exchange, and heterovalent cation doped into PQDs (Bi ). These PQD analogs open new possibilities for optoelectronic devices.

High-Performance CsPb Sn Br Perovskite Quantum Dots for Light-Emitting Diodes.

All inorganic CsPbBr perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot-injection method to partially replace the toxic Pb with highly stable Sn . Meanwhile, the absolute photoluminescence quantum yield of CsPb Sn Br increased from 45 % to 83 % with Sn substitution.

Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m.

Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m , low turn-on voltage (2.

Mesoporous Silica Particles Integrated with All-Inorganic CsPbBr3 Perovskite Quantum-Dot Nanocomposites (MP-PQDs) with High Stability and Wide Color Gamut Used for Backlight Display.

All-inorganic CsPbX3 (X=I, Br, Cl) perovskite quantum dots (PQDs) have been investigated because of their optical properties, such as tunable wavelength, narrow band, and high quantum efficiency. These features have been used in light emitting diode (LED) devices. LED on-chip fabrication uses mixed green and red quantum dots with silicone gel.