Lead-free cesium bismuth iodide (CsBiI) perovskite exhibits extraordinary optoelectronic properties and attractive potential in various optoelectronic devices, especially the application for photodetectors. However, most CsBiIphotodetectors demonstrated poor detection performance due to the difficulty in obtaining high-quality polycrystalline films. Therefore, it makes sense to modulate the preparation of high-quality CsBiIpolycrystalline films and expand its applications.
View Article and Find Full Text PDFA high-quality Sn-based perovskite absorption layer and effective carrier transport are the basis for high-performance Sn-based perovskite solar cells. The suppression of Sn oxidation and rapid crystallization is the key to obtaining high-quality Sn-based perovskite film. And interface engineering is an effective strategy to enhance carrier extraction and transport.
View Article and Find Full Text PDFThe efficiency and durability of perovskite solar cells (PSCs) are closely related to the property and stability of each functional layer involved in device. Owing to the excellent hole transport properties, the additive-doped Spiro-OMeTAD (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine) 9,9'-spirobifluorene) has become an excellent hole-transporting material for obtaining highly efficient PSCs. However, the hygroscopic nature of additives and the pinholes caused by poor film-forming capability inevitably impair the performance and long-term stability of Spiro-OMeTAD and the resulting PSCs.
View Article and Find Full Text PDFJ Colloid Interface Sci
February 2022
Carbon-based perovskite solar cells (C-PSCs) have attracted widespread research interest because of their excellent stability. However, the power conversion efficiency (PCE) of C-PSCs, especially planar C-PSCs, lags far behind the certified efficiency (25.5%) of metal-based PSCs.
View Article and Find Full Text PDFThe microscopic charge transport and recombination processes behind the widely concerned photoelectric hysteresis in the perovskite solar cell have been investigated with both in situ transient photovoltage/photocurrent measurements and the semiconductor device simulation. Time-dependent behaviors of intensity and direction of the photocurrent and photovoltage are observed under the steady-state bias voltages and open-circuit conditions. These charge processes reveal the electric properties of the cell, demonstrating evolutions of both strength and direction of the internal electric field during the hysteresis.
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