Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors.

Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals.

Substrate Interference and Strain in the Second-Harmonic Generation from MoSe Monolayers.

Nonlinear optical materials of atomic thickness, such as non-centrosymmetric 2H transition metal dichalcogenide monolayers, have a second-order nonlinear susceptibility (χ) whose intensity can be tuned by strain. However, whether χ is enhanced or reduced by tensile strain is a subject of conflicting reports. Here, we grow high-quality MoSe monolayers under controlled biaxial strain created by two different substrates and study their linear and nonlinear optical responses with a combination of experimental and theoretical approaches.

Array of Graphene Variable Capacitors on 100 mm Silicon Wafers for Vibration-Based Applications.

Highly flexible, electrically conductive freestanding graphene membranes hold great promise for vibration-based applications. This study focuses on their integration into mainstream semiconductor manufacturing methods. We designed a two-mask lithography process that creates an array of freestanding graphene-based variable capacitors on 100 mm silicon wafers.

Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor.

Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with calculations establish the large work function and narrow bands of α-RuCl enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride.

Gate voltage and doping effects on near-field radiation heat transfer in plasmonic heterogeneous pairs of graphene and black phosphorene.

Plasmon coupling and hybridization in 2D materials plays a significant role for controlling light-matter interaction at the nanoscale. We present a near-field radiation heat transfer (NFRHT) between vertically separated graphene and black phosphorene sheets at different temperatures in nanoscale separations. Radiation exchange from the theory of fluctuation electrodynamics is modulated by the carrier density of graphene and phosphorene.

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials.

We describe methods for producing and analyzing large, thin flakes of air-sensitive two-dimensional materials. Thin flakes of layered or van der Waals crystals are produced using mechanical exfoliation, in which layers are peeled off a bulk crystal using adhesive tape. This method produces high-quality flakes, but they are often small and can be hard to find, particularly for materials with relatively high cleavage energies such as black phosphorus.

Tuning Infrared Plasmon Resonance of Black Phosphorene Nanoribbon with a Dielectric Interface.

We report on the tunable edge-plasmon-enhanced absorption of phosphorene nanoribbons supported on a dielectric substrate. Monolayer anisotropic black phosphorous (phosphorene) nanoribbons are explored for light trapping and absorption enhancement on different dielectric substrates. We show that these phosphorene ribbons support infrared surface plasmons with high spatial confinement.

Toward Single Atom Chains with Exfoliated Tellurium.

We demonstrate that the atom chain structure of Te allows it to be exfoliated as ultra-thin flakes and nanowires. Atomic force microscopy of exfoliated Te shows that thicknesses of 1-2 nm and widths below 100 nm can be exfoliated with this method. The Raman modes of exfoliated Te match those of bulk Te, with a slight shift (4 cm) due to a hardening of the A and E modes.

Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers.

Ridged, orthorhombic two-dimensional atomic crystals with a bulk Pnma structure such as black phosphorus and monochalcogenide monolayers are an exciting and novel material platform for a host of applications. Key to their crystallinity, monolayers of these materials have a 4-fold degenerate structural ground state, and a single energy scale EC (representing the elastic energy required to switch the longer lattice vector along the x- or y-direction) determines how disordered these monolayers are at finite temperature. Disorder arises when nearest neighboring atoms become gently reassigned as the system is thermally excited beyond a critical temperature Tc that is proportional to EC/kB.

Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN.

We report high quality graphene and WSe2 devices encapsulated between two hexagonal boron nitride (hBN) flakes using a pick-up method with etched hBN flakes. Picking up prepatterned hBN flakes to be used as a gate dielectric or mask for other 2D materials opens new possibilities for the design and fabrication of 2D heterostructures. In this Letter, we demonstrate this technique in two ways: first, a dual-gated graphene device that is encapsulated between an hBN substrate and prepatterned hBN strips.

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-n junctions to be configured and modified by electrostatic gating.

Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.

We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS2. Through a combination of in situ vacuum annealing and electrostatic gating we obtained ohmic contact to the MoS2 down to 4 K at high carrier densities. At lower carrier densities, low-temperature four probe transport measurements show a metal-insulator transition in both monolayer and bilayer samples.

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.

One proposal for a solid-state-based quantum bit (qubit) is to control coupled electron spins on adjacent semiconductor quantum dots. Most experiments have focused on quantum dots made from III-V semiconductors; however, the coherence of electron spins in these materials is limited by hyperfine interactions with nuclear spins. Ge/Si core/shell nanowires seem ideally suited to overcome this limitation, because the most abundant nuclei in Ge and Si have spin zero and the nanowires can be chemically synthesized defect-free with tunable properties.