Publications by authors named "Hugh G Manning"

Conductive and transparent metallic nanowire networks are regarded as promising alternatives to Indium-Tin-Oxides (ITOs) in emerging flexible next-generation technologies due to their prominent optoelectronic properties and low-cost fabrication. The performance of such systems closely relies on many geometrical, physical, and intrinsic properties of the nanowire materials as well as the device-layout. A comprehensive computational study is essential to model and quantify the device's optical and electrical responses prior to fabrication.

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Ge Sn nanowires incorporating a large amount of Sn would be useful for mobility enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for application in optoelectronic devices and to increase the efficiency of the GeSn-based photonic devices. Here we report the catalytic bottom-up fabrication of Ge Sn nanowires with very high Sn incorporation ( > 0.3).

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Engineering of self-disinfecting surfaces to constrain the spread of SARS-CoV-2 is a challenging task for the scientific community because the human coronavirus spreads through respiratory droplets. Titania (TiO) nanocomposite antimicrobial coatings is one of the ideal remedies to disinfect pathogens (virus, bacteria, fungi) from common surfaces under light illumination. The photocatalytic disinfection efficiency of recent TiO nanocomposite antimicrobial coatings for surfaces, dental and orthopaedic implants are emphasized in this review.

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Brain-inspired, neuromorphic computing aims to address the growing computational complexity and power consumption in modern von-Neumann architectures. Progress in this area has been hindered due to the lack of hardware elements that can mimic neuronal/synaptic behavior which form the fundamental building blocks for spiking neural networks (SNNs). In this work, we leverage the short/long term memory effects due to the electron trapping events in an atomically thin channel transistor that mimic the exchange of neurotransmitters and emulate a synaptic response.

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Considerable attention has been drawn to the lead halide perovskites (LHPs) because of their outstanding optoelectronic characteristics. LHP nanosheets (NSs) grown from single crystalline lead halide possess advantages in device applications as they provide the possibility for control over morphology, composition, and crystallinity. Here, free-standing lead bromide (PbBr) single-crystalline NSs with sizes up to one centimeter are synthesized from solution.

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Networks of metallic nanowires have the potential to meet the needs of next-generation device technologies that require flexible transparent conductors. At present, there does not exist a first principles model capable of predicting the electro-optical performance of a nanowire network. Here we combine an electrical model derived from fundamental material properties and electrical equations with an optical model based on Mie theory scattering of light by small particles.

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Nanowire networks are promising memristive architectures for neuromorphic applications due to their connectivity and neurosynaptic-like behaviours. Here, we demonstrate a self-similar scaling of the conductance of networks and the junctions that comprise them. We show this behavior is an emergent property of any junction-dominated network.

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Nonpolar resistive switching (RS), a combination of bipolar and unipolar RS, is demonstrated for the first time in a single nanowire (NW) system. Exploiting Ag@TiO core-shell (CS) NWs synthesized by postgrowth shell formation, the switching mode is controlled by adjusting the current compliance effectively, tailoring the electrical polarity response. We demonstrate ON/OFF ratios of 10 and 10 for bipolar and unipolar modes, respectively.

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Motivated by numerous technological applications, there is current interest in the study of the conductive properties of networks made of randomly dispersed nanowires. The sheet resistance of such networks is normally calculated by numerically evaluating the conductance of a system of resistors but due to disorder and with so many variables to account for, calculations of this type are computationally demanding and may lack mathematical transparency. Here we establish the equivalence between the sheet resistance of disordered networks and that of a regular ordered network.

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Networks of silver nanowires appear set to replace expensive indium tin oxide as the transparent conducting electrode material in next generation devices. The success of this approach depends on optimizing the material conductivity, which until now has largely focused on minimizing the junction resistance between wires. However, there have been no detailed reports on what the junction resistance is, nor is there a known benchmark for the minimum attainable sheet resistance of an optimized network.

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In this work, we introduce a combined experimental and computational approach to describe the conductivity of metallic nanowire networks. Due to their highly disordered nature, these materials are typically described by simplified models in which network junctions control the overall conductivity. Here, we introduce a combined experimental and simulation approach that involves a wire-by-wire junction-by-junction simulation of an actual network.

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