Publications by authors named "Hucheng Lei"

This paper proposes a novel wafer-level vacuum packaged electric field microsensor (EFM) featuring a high quality factor, low driving voltage, low noise, and low power consumption. The silicon-on-insulator (SOI) conductive handle layer was innovatively used as the sensing channel to transmit the external electric field to the surface of the sensitive structure, and the vacuum packaging was realized through anodic bonding between the SOI and glass-on-silicon (GOS). The fabrication process was designed and successfully realized, featured with a simplified process and highly efficient batch manufacturing, and the final chip size was only 5 × 5 mm.

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This paper proposes an electric field microsensor (EFM) with mutual shielding electrodes. Based on the charge-induction principle, the EFM consists of fixed electrodes and piezoelectric-driving vertically-movable electrodes. All the fixed electrodes and movable electrodes work as both sensing electrodes and shielding electrodes.

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One of the major concerns in the development of three-dimensional (3D) electric field sensors (EFSs) is their susceptibility to cross-axis coupling interference. The output signal for each sensing axis of a 3D EFS is often coupled by electric field components from the two other orthogonal sensing axes. In this paper, a one-dimensional (1D) electric field sensor chip (EFSC) with low cross-axis coupling interference is presented.

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Article Synopsis
  • - This paper presents a highly sensitive electric field microsensor (EFM) that utilizes a torsional resonance design, incorporating movable and fixed shielding and sensing electrodes arranged on the same plane.
  • - The microsensor employs a push-pull electrostatic actuation method, which enhances charge induction efficiency and has been further improved through structural optimization and a special micromachining fabrication process.
  • - Experimental results show the EFM achieves impressive performance, including a linearity of 0.15% over an electrostatic field range of 0-50 kV/m, low measurement uncertainty, and a high sensitivity of 4.82 mV/(kV/m), significantly outperforming existing EFMs by at least one order of magnitude
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