High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.

The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm.

Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz.

Simultaneous dielectrophoretic separation and assembly of single-walled carbon nanotubes on multigap nanoelectrodes and their thermal sensing properties.

By using the specifically designed multigap nanoelectrodes, we demonstrated an effective approach for the simultaneous dielectrophoretic separation and assembly of metallic and semiconducting single-walled carbon nanotubes (SWNTs). An approximate metallic-semiconducting-metallic multiarray structure was created by an inward-propagative sequential assembly of SWNTs under ac electric field. Such kinds of SWNT multiarray structures exhibited ultra-low-power consumption and excellent thermal sensing performances with the sensitivity being dependent on the number of gaps: the more gaps, the higher sensitivity.