High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.

Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs).

Stress effect on the resonance properties of single-crystal diamond cantilever resonators for microscopy applications.

Micro-cantilever beams have been widely used for surface sensing applications as well as atomic force microscope. However, surface stress appears in cantilever beams due to a variety of factors such as the absorption of molecules, temperature variations, materials imperfectness, and the fabrication process. Single-crystal diamond (SCD) has been regarded as an ideal material for cantilever sensors through the surface effect due to the outstanding mechanical rigidity and chemical inertness.

Effect of Deep-Defects Excitation on Mechanical Energy Dissipation of Single-Crystal Diamond.

The ultrawide band gap of diamond distinguishes it from other semiconductors, in that all known defects have deep energy levels that are less active at room temperature. Here, we present the effect of deep defects on the mechanical energy dissipation of single-crystal diamond experimentally and theoretically up to 973 K. Energy dissipation is found to increase with temperature and exhibits local maxima due to the interaction between phonons and deep defects activated at specific temperatures.

Strain-enhanced high -factor GaN micro-electromechanical resonator.

We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor () exceeding 10 at the high resonant frequency () of 911 kHz by the strain engineering for the GaN-on-Si structure. The of the double-clamped GaN beam bridge is increased from 139 to 911 kHz when the tensile stress is increased to 640 MPa. Although it is usually regarded that the energy dissipation increases with increasing resonant frequency, an ultra-high -factor which is more than two orders of magnitude higher than those of the other reported GaN-based MEMS is obtained.

Rebuilding of destroyed spin squeezing in noisy environments.

We investigate the process of spin squeezing in a ferromagnetic dipolar spin-1 Bose-Einstein condensate under the driven one-axis twisting scheme, with emphasis on the detrimental effect of noisy environments (stray magnetic fields) which completely destroy the spin squeezing. By applying concatenated dynamical decoupling pulse sequences with a moderate bias magnetic field to suppress the effect of the noisy environments, we faithfully reconstruct the spin squeezing process under realistic experimental conditions. Our noise-resistant method is ready to be employed to generate the spin squeezed state in a dipolar spin-1 Bose-Einstein condensate and paves a feasible way to the Heisenberg-limit quantum metrology.

[Expression and clinical significance of calcium-binding protein S100A9 in breast cancer].

Aim: To investigate the expression and clinical significance of calcium-binding protein S100A9 in the patients of breast cancer.

Methods: The serum S100A9 level from 39 cases of preoperative breast cancer, 15 postoperative patients, and 10 healthy women was detected by ELISA. Immunohistochemistry was used to detect the S100A9 expression in 12 specimens of breast cancer tissues.

[Serological antibodies comparison of a hepatitis E outbreak].

Objective: To compare the serological characters of an outbreak of hepatitis E and evaluate sensitivity and specificity of anti-HEV E2-IgM.

Methods: The sera collected from the employees of an outbreak unit were detected for anti-HEV E2-IgM and IgG, and the serum samples from a neighboring department were used as control. The results detected with anti-HEV E2-IgM, IgG and Genelab anti-HEV IgM, IgG in some samples were compared.

[Serological characteristics of a hepatitis E outbreak].

Objective: To look into the serological characteristics of a hepatitis E outbreak.

Methods: Sera from the first five patients with acute icteric hepatitis who developed the disease successively within ten days and the 1,675 employees routinely having their lunch in a dining hall of a department (outbreak population) were examined for anti.HEV IgM and IgG at 26th days after the outbreak, and the 883 employees of a neighboring department not having their lunch in the hall were selected as control (control population).