Background: According to the Technical Operation Procedures for Plasmapheresis Collection Station (2019) in China, plasmapheresis donors with low hemoglobin (Hb) levels (men <12.0 g/dL; women <11.0 g/dL) were deferred for at least 2 weeks.
View Article and Find Full Text PDFPhase-change random access memory is a promising technique to realize universal memory and neuromorphic computing, where the demand for robust multibit programming drives exploration for high-accuracy resistance control in memory cells. Here in ScSbTe phase-change material films, we demonstrate thickness-independent conductance evolution, presenting an unprecedently low resistance-drift coefficient in the range of ∼10-10, ∼3-2 orders of magnitude lower compared to conventional GeSbTe. By atom probe tomography and simulations, we unveiled that nanoscale chemical inhomogeneity and constrained Peierls distortion together suppress structural relaxation, rendering an almost invariant electronic band structure and thereby the ultralow resistance drift of ScSbTe films upon aging.
View Article and Find Full Text PDFBackground: CUL4A has been known for its oncogenic properties in various human cancers. However, its role in intrahepatic cholangiocarcinoma (iCCA) has not been explored.
Methods: We retrospectively investigated 105 iCCA cases from a single medical institution.