Double-Phase Ga-Doped InO Nanospheres and Their Self-Assembled Monolayer Film for Ultrasensitive HCHO MEMS Gas Sensors.

In the sensing field, the electronic structure of sensing materials has a great influence on the properties of the sensors. Here, by Ga doping pure rhombohedral InO (h-InO), the double-phase InO (cubic/rhombohedral InO, c/h-InO) porous nanospheres are obtained. And then Micro Electromechanical System (MEMS) gas sensors based on monolayer film are further fabricated by self-assembling the above nanospheres.