Convolutional neural network-based spectrum reconstruction solver for channeled spectropolarimeter.

Channeled spectropolarimetry is a snapshot technique for measuring the spectra of Stokes parameters of light by demodulating the measured spectrum. As an indispensable part of the channeled spectropolarimeter, the spectrometer module is far from being perfect to reflect the real modulation spectrum, which further reduces the polarimetric reconstruction accuracy of the channeled spectropolarimeter. Since the modulation spectrum is composed of many continuous narrow-band spectra with high frequency, it is a challenging work to reconstruct it effectively by existing methods.

Tuning electronic structure of monolayer InP in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy.

Monolayer indium triphosphide (m-InP), predicted theoretically to be a new 2D semiconducting material, exhibits a promising opportunity for applications in electronic and optoelectronic devices [N. H. Miao, et al.

Spatial and thickness dependence of coupling interaction of surface states and influence on transport and optical properties of few-layer BiSe.

Coupling interaction between the bottom and top surface electronic states and the influence on transport and optical properties of BiSe thin films with 1-8 quintuple layers (QLs) have been investigated by first principles calculations. Obvious spatial and thickness dependences of coupling interaction are found by analyzing hybridization of two surface states. In the thin film with a certain thickness, from the outer to inner atomic layers, the coupling interaction exhibits an increasing trend.

Ultrathin (BiSb)Se Field Effect Transistor with Large ON/OFF Ratio.

Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (BiSb)Se ultrathin films were fabricated on SrTiO substrate, where large resistance changes of ∼25 000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime.

[Structure analysis on growth solid-liquid boundary layer of BSO crystal at real time].

The micro Raman spectra of solid-liquid boundary layer, the melts and crystal side, were measured at real time, concerning BSO crystal grown with zone-melting method. The structure characters in boundary layer, melts and crystal were analyzed. The process, of which the growth unit structure changed while they transited from melts through boundary layer to crystal lattice, was analyzed.

[High temperature Raman spectra and structure character study of BSO crystal].

The structure character of BSO crystal at room temperature was generalized. The main Raman shifts of lattice vibration at room temperature were interpreted. The Raman spectra of BSO crystal were measured in a temperature range from 293 K to 1123 K with high temperature Raman spectroscopy and time-resolved detection techniques.

[Raman spectra study of tellurium dioxide (TeO2) crystal].

The room temperature and high temperature Raman spectra of solid/melt growth boundary layers of TeO2 grown from melt were measured by high-temperature laser-micro-Raman spectrum. By analyzing, vibrational modes of the room temperature Raman spectra peaks of TeO2 crystal from band 200-800 cm-1 were confirmed, the expansion and frequency shift of each peak of the high temperature Raman spectra were interpreted and the possible structure group of the melt was proposed. So, certain foundation for studying the growth theory of functional crystal materials was provided.