Publications by authors named "Huaibing Wang"
Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for monolithic integration with Si photonics. Fabrication of semiconductor lasers with a Fabry-Pérot cavity usually includes facet cleavage, however, that is not compatible with on-chip photonic integration. Etching as an alternative approach holds a great advantage in preparing cavity mirrors with no need of breaking wafer into bars.
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- Silicon photonics has been seeking efficient on-chip light sources that can be electrically driven at room temperature, particularly microdisk lasers due to their directional lasing capabilities.
- Traditional challenges in developing III-nitride microdisk lasers on silicon have included issues with material quality and undercut structures, hindering progress.
- Recent advances have led to the successful creation of electrically pumped InGaN-based microdisk lasers on silicon, demonstrating clear signs of lasing, marking a significant step forward in this technology.
[GaN-based white-light-emitting diodes with low color temperature and high color rendering index].
Guang Pu Xue Yu Guang Pu Fen Xi
June 2011
The luminescence properties of high color rendering white LED depending on the proportions of mixed phosphor powders were investigated by adopting green and red phosphors stimulated by a 440 nm InGaN/GaN based blue LED. The results show that when the proportion of A/B type silica gels and green/red phosphor powders is 0.5 : 0.
View Article and Find Full Text PDFGaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There are low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect of growth rate on dislocations in GaN films grown on PSS is investigated by TEM.
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