A Review of Recent Advances in Superhydrophobic Surfaces and Their Applications in Drag Reduction and Heat Transfer.

Inspired by the superhydrophobic properties of some plants and animals with special structures, such as self-cleaning, water repellent, and drag reduction, the research on the basic theory and practical applications of superhydrophobic surfaces is increasing. In this paper, the characteristics of superhydrophobic surfaces and the preparation methods of superhydrophobic surfaces are briefly reviewed. The mechanisms of drag reduction on superhydrophobic surfaces and the effects of parameters such as flow rate, fluid viscosity, wettability, and surface morphology on drag reduction are discussed, as well as the applications of superhydrophobic surfaces in boiling heat transfer and condensation heat transfer.

Peculiar phase diagram with isolated superconducting regions in ThFeAsN O .

ThFeAsN O ([Formula: see text]) system with heavy electron doping has been studied by the measurements of x-ray diffraction, electrical resistivity, magnetic susceptibility and specific heat. The non-doped compound exhibits superconductivity at [Formula: see text] K, which is possibly due to an internal uniaxial chemical pressure that is manifested by the extremely small value of As height with respect to the Fe plane. With the oxygen substitution, the T value decreases rapidly to below 2 K for [Formula: see text], and surprisingly, superconductivity re-appears in the range of [Formula: see text] with a maximum [Formula: see text] of 17.

THz Transmittance and Electrical Properties Tuning across IMT in Vanadium Dioxide Films by Al Doping.

Due to the insulator-metal transition (IMT) performance covering the full terahertz (THz) band, VO2 films were extensively investigated as an excellent candidate for modulating, switching, and memory devices. However, some remarkable absorption peaks owing to the infrared-active phonon modes suppressed the films' modulation ability and restricted the films' application in high THz frequency. Here we prepared Al-doped VO2 films on (111) directional silicon substrate, which rapidly counteracted the absorption peak and exhibited widely modulating properties.