Recent progress of group III-V materials-based nanostructures for photodetection.

Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection ranges from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors.

Pseudospark-sourced beam and its application in high-power millimeter-wave generation.

A pseudospark (PS) discharge can generate an electron beam with a high current density. The electron beam can be self-focused by an ion channel and transported over a long distance without the need for an external magnetic field. Such features make it attractive to drive millimeter-wave/THz interaction circuits for the generation of high-power radiation from a compact device.