Publications by authors named "Hu Young Jeong"

Metal conversion processes have been instrumental in advancing semiconductor technology by facilitating the growth of thin-film semiconductors, including metal oxides and sulfides. These processes, widely used in the industry, enhance the semiconductor manufacturing efficiency and scalability, offering convenience, large-area fabrication suitability, and high throughput. Furthermore, their application to emerging two-dimensional (2D) semiconductors shows promise in addressing spatial control and layer number control challenges.

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  • The study explores how marginalized groups, specifically Asian Americans, perceive power not just as control over others but as the ability to meet fundamental needs.
  • Through qualitative interviews, eight themes emerged that illustrate diverse understandings of power related to oppression, wellness, and liberation.
  • The research highlights the importance of considering the variations within groups regarding power perceptions and the influence of sociopolitical and structural contexts on these views.
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Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin-orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin-valley locking in K or K' valleys, the ultra-short valley lifetime limits their room-temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure.

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Van der Waals (vdW) stacking is a powerful technique to achieve desired properties in condensed matter systems through layer-by-layer crystal engineering. A remarkable example is the control over the twist angle between artificially-stacked vdW crystals, enabling the realization of unconventional phenomena in moiré structures ranging from superconductivity to strongly correlated magnetism. Here, we report the appearance of unusual 120° twisted faults in vdW magnet CrI crystals.

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  • Nickel boride (NiB) catalysts are promising low-cost alternatives to noble-metal catalysts for hydrogen production, but they face challenges in stability and synthesis.
  • This study introduces a single-crystal NiB that demonstrates high electrocatalytic activity for hydrogen evolution in acidic conditions, and resolves stability issues by encapsulating it with a trilayer hexagonal boron nitride (hBN) film.
  • The hBN/NiB/Ni structure maintains its performance over 2000 cycles, showing durability and minimal degradation, while the bare NiB exhibits significant decline after just 650 cycles.
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  • This study explores the role of magnetic anisotropy in ultra-thin heterostructures, particularly for advancing spintronic technologies.
  • The researchers focused on the effects of dimensionality in epitaxially grown correlated oxides, finding that varying the thickness of SrRuO layers influences their magnetic properties.
  • A notable finding was a 1500% increase in the coercive field in certain configurations, highlighting the significance of atomic-scale design in enhancing magnetic behavior and enabling new applications in synthetic magnetic materials.
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Platinum ditelluride (1-PtTe) is a two-dimensional (2D) topological semimetal with a distinctive band structure and flexibility of van der Waals integration as a promising candidate for future electronics and spintronics. Although the synthesis of large-scale, uniform, and highly crystalline films of 2D semimetals system is a prerequisite for device application, the synthetic methods meeting these criteria are still lacking. Here, we introduce an approach to synthesize highly oriented 2D topological semimetal PtTe using a thermally assisted conversion called tellurization, which is a cost-efficient method compared to the other epitaxial deposition methods.

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CuSe is a superionic conductor above 414 K, with ionic conductivities reaching that of molten salts. The superionic behavior results from hopping Cu ions between different crystallographic sites within the Se scaffold. However, the properties of CuSe below 414 K are far less known due to experimental limitations imposed by the bulk or polycrystalline samples that have been available so far.

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Robust ferroelectricity in HfO-based ultrathin films has the potential to revolutionize nonvolatile memory applications in nanoscale electronic devices because of their compatibility with the existing Si technology. However, to fully exploit the potential of ferroelectric HfO-based thin films, it is crucial to develop strategies for the controlled stabilization of various HfO-based polymorphs in nanoscale heterostructures. This study demonstrates how substrate-orientation-induced anisotropic strain can engineer the crystal symmetry, structural domain morphology, and growth orientation of ultrathin HfZrO (HZO) films.

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  • A new device architecture called van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) uses molybdenum disulfide (MoS) channels with surface-oxidized metal gates to improve performance in field-effect transistors (FETs).
  • These MESFETs operate at low gate voltages under 0.5 volts and demonstrate ideal switching behavior due to the strong coupling at the Schottky junction, achieving minimal energy loss during operation.
  • The study shows that improving the interface between the metal gate and the MoS channel can enhance performance by eliminating unwanted states, leading to a new approach for developing efficient 2D electronic devices.
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  • The advanced patterning process is essential for creating next-gen high-speed, low-power devices, with area-selective atomic layer deposition (AS-ALD) being a promising method, though it faces challenges in resolution and selectivity.
  • This study presents a new technique called superlattice-based AS-ALD (SAS-ALD) that uses a 2D MoS-MoSe superlattice template, achieving a minimum half pitch size of sub-10 nm by controlling chemical vapor deposition (CVD) precursors.
  • SAS-ALD improves selectivity through unique adsorption and diffusion processes of precursors, allowing for effective selective deposition of various materials like AlO, HfO, Ru, Te,
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Layered 2D transition metal dichalcogenides (TMDs) have been suggested as efficient substitutes for Pt-group metal electrocatalysts in the hydrogen evolution reaction (HER). However, poor catalytic activities in neutral and alkaline electrolytes considerably hinder their practical applications. Furthermore, the weak adhesion between TMDs and electrodes often impedes long-term durability and thus requires a binder.

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As semiconductor scaling continues to reach sub-nanometer levels, two-dimensional (2D) semiconductors are emerging as a promising candidate for the post-silicon material. Among these alternatives, BiOSe has risen as an exceptionally promising 2D semiconductor thanks to its excellent electrical properties, attributed to its appropriate bandgap and small effective mass. However, unlike other 2D materials, growth of large-scale BiOSe films with precise layer control is still challenging due to its large surface energy caused by relatively strong interlayer electrostatic interactions.

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Three-dimensional (3D) microprinting is considered a next-generation manufacturing process for the production of microscale components; however, the narrow range of suitable materials, which include mainly polymers, is a critical issue that limits the application of this process to functional inorganic materials. Herein, we develop a generalised microscale 3D printing method for the production of purely inorganic nanocrystal-based porous materials. Our process is designed to solidify all-inorganic nanocrystals via immediate dispersibility control and surface linking-induced interconnection in the nonsolvent linker bath and thereby creates multibranched gel networks.

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Copper surfaces that exhibit a wide range of achromatic colors while still metallic have not been studied, despite advancements in antireflection coatings. A series of achromatic copper films grown with [111] preferred orientation by depositing 3D porous nanostructures is introduced via coherent/incoherent atomic sputtering epitaxy. The porous copper nanostructures self-regulate the giant oxidation resistance by constructing a curved surface that generates a series of monoatomic steps, followed by shrinkage of the lattice spacing of one or two surface layers.

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Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization.

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Since facile routes to fabricate freestanding oxide membranes were previously established, tremendous efforts have been made to further improve their crystallinity, and fascinating physical properties have been also reported in heterointegrated freestanding membranes. Here, we demonstrate our synthetic recipe to manufacture highly crystalline perovskite SrRuO freestanding membranes using new infinite-layer perovskite SrCuO sacrificial layers. To accomplish this, SrRuO/SrCuO bilayer thin films are epitaxially grown on SrTiO (001) substrates, and the topmost SrRuO layer is chemically exfoliated by etching the SrCuO template layer.

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Memristors are drawing attention as neuromorphic hardware components because of their non-volatility and analog programmability. In particular, electrochemical metallization (ECM) memristors are extensively researched because of their linear conductance controllability. Two-dimensional materials as switching medium of ECM memristors give advantages of fast speed, low power consumption, and high switching uniformity.

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Heterosynaptic neuromodulation is a key enabler for energy-efficient and high-level biological neural processing. However, such manifold synaptic modulation cannot be emulated using conventional memristors and synaptic transistors. Thus, reported herein is a three-terminal heterosynaptic memtransistor using an intentional-defect-generated molybdenum disulfide channel.

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Boosting dielectric permittivity representing electrical polarizability of dielectric materials has been considered a keystone for achieving scientific breakthroughs as well as technological advances in various multifunctional devices. Here, we demonstrate sizable enhancements of low-frequency dielectric responses in oxygen-deficient oxide ceramics through specific treatments under humid environments. Ultrahigh dielectric permittivity (~5.

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In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process.

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Constructing a mono-atom step-level ultra-flat material surface is challenging, especially for thin films, because it is prohibitively difficult for trillions of clusters to coherently merge. Even though a rough metal surface, as well as the scattering of carriers at grain boundaries, limits electron transport and obscures their intrinsic properties, the importance of the flat surface has not been emphasised sufficiently. In this study, we describe in detail the initial growth of copper thin films required for mono-atom step-level flat surfaces (MSFSs).

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Single atom catalysts (SACs) with isolated active sites exhibit the highest reported mass activity for hydrogen evolution catalysis, which is crucial for practical applications. Here, we demonstrate that ultrahigh mass activity can also be achieved by rationally merging the isolated platinum (Pt) active sites in SAC. The catalyst was obtained by the thermodynamically driven diffusing and merging phosphorus-doped carbon (PC) supported Pt single atoms (Pt@PC) into Pt nanoclusters (Pt@PC).

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Metal halide perovskites (MHPs) have gained traction as emitters owing to their excellent optical properties, such as facile bandgap tuning, defect tolerance, and high color purity. Nevertheless, blue-emitting MHP light-emitting diodes (LEDs) show only marginal progress in device efficiency compared with green and red LEDs. Herein, the origin of the drop in efficiency of blue-emitting perovskite nanocrystals (PNCs) by mixing halides and the genesis of Ruddlesden-Popper faults (RPFs) in CsPbBr Cl nanocrystals is investigated.

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Developing covalent organic frameworks (COFs) with good electrical conductivity is essential to widen their range of practical applications. Thermal annealing is known to be a facile approach for enhancing conductivity. However, at higher temperatures, most COFs undergo amorphization and/or thermal degradation because of the lack of linker rigidity and physicochemical stability.

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