Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions.

A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4aq with Sns in the presence of CTACaq (cetyltrimethylammonium chloride) and NaNO3aq, which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 microm.