A GeSe switch-only-memory technology through polarized atomic distribution.

Ovonic threshold switching (OTS) materials that are frequently used with a resistor (1S1R) in memory devices have been found to show controllable and reversible memory properties, which could enable new memory architectures. Here, we examine the impact of composition on the polarity-dependent memory properties of GeSe OTS materials and reveal that an increase in Se content results in a higher set voltage threshold (V), a lower reset current (I), and a higher set energy. Specifically, GeSe demonstrates two distinct V of 5.

Author Correction: Analog Coding in Emerging Memory Systems.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Analog Coding in Emerging Memory Systems.

Exponential growth in data generation and large-scale data science has created an unprecedented need for inexpensive, low-power, low-latency, high-density information storage. This need has motivated significant research into multi-level memory devices that are capable of storing multiple bits of information per device. The memory state of these devices is intrinsically analog.