Biocompatibility and transient nature of electronic devices have been the matter of attention in recent times due to their immense potential for sustainable solutions toward hazardous e-wastes. In order to fulfill the requirement of high-density data-storage devices due to explosive growth in digital data, a resistive switching (RS)-based memory device could be the promising alternative to the present Si-based electronics. In this research work, we employed a biocompatible enzymatic protein lysozyme (Lyso) as the active layer to design a RS memory device having a device structure Au/Lyso/ITO.
View Article and Find Full Text PDFNon-volatile memory devices using organic materials have attracted much attention due to their excellent scalability, fast switching speed, low power consumption, low cost Here, we report both volatile as well as non-volatile resistive switching behavior of -di[3,3'-bis(2-methylindolyl)methane]benzene (Indole2) and its mixture with stearic acid (SA). Previously, we have reported the bipolar resistive switching (BRS) behavior using 1,4-bis(di(1-indol-3-yl)methyl)benzene (Indole1) molecules under ambient conditions [Langmuir 37 (2021) 4449-4459] and complementary resistive switching (CRS) behavior when the device was exposed to 353 K or higher temperature [Langmuir 38 (2022) 9229-9238]. However, the present study revealed that when the H of -NH group of Indole1 is replaced by -CH, the resultant Indole2 molecule-based device showed volatile threshold switching behaviour.
View Article and Find Full Text PDFComplementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure. Here, we report the CRS behavior of 1,4-bis(di(1-indol-3-yl)methyl)benzene (Indole1) molecules. Our earlier study revealed that Au/Indole1/Indium tin oxide (ITO) devices showed BRS under ambient conditions.
View Article and Find Full Text PDFIn the present communication, we have investigated the interaction between a biomembrane component 1,2-dioleoyl--glycero-3-phosphocholine (DOPC) and a coagulating protein protamine sulfate (PS) using the Langmuir-Blodgett (LB) technique. The π- isotherm, π- characteristics, and analysis of isotherm curves suggested that PS strongly interacted with DOPC, affecting the fluidity of the DOPC layer. Electrical characterization indicates that PS as well as the PS-DOPC film showed resistive switching behavior suitable for Write Once Read Many (WORM) memory application.
View Article and Find Full Text PDFBipolar resistive switching using organic molecule is very promising for memory applications owing to their advantages, such as simple device structure, low manufacturing cost, stability, and flexibility. Herein we report Langmuir-Blodgett (LB) and spin-coated-film-based bipolar resistive switching devices using organic material 1,4-bis(di(1-indol-3-yl)methyl)benzene (Indole1). The pressure-area per molecule isotherm (π-), Brewster angle microscopy (BAM), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to formulate an idea about the organization and morphology of the organic material onto thin films.
View Article and Find Full Text PDF