On-chip multi-trap optical tweezers based on a guided wave-driven metalens.

Optical tweezer arrays (OTAs) have emerged as a powerful tool for quantum simulation, quantum computation, and quantum many-body physics. Conventional OTAs require bulky and costly optical components to generate multiple optical traps, such as spatial light modulators (SLMs). An integrated way to achieve on-chip OTAs is a sought-after goal for compact optical manipulation.

Electrically function-switchable magnetic domain-wall memory.

Versatile memory is strongly desired for end users, to protect their information in the information era. In particular, bit-level switchable memory that can be switched from rewritable to read-only function would allow end users to prevent important data being tampered with. However, no such switchable memory has been reported.

Meta-Atom Coupling Induced Chiral Hotspot in Silicon Nitride Staggered Nanorods Meta-Surface.

Dielectric meta-surfaces have emerged as an effective way for fabricating chiral optical devices, and the chiral meta-surfaces are usually constituted by periodic chiral meta-atom structures. Here, we report a chiral meta-surface consisting of nonchiral silicon nitride rectangular nanorods. The chiral hotspots are generated between the staggered nanorods due to the coupling between the two nearest neighbor nanorod units.

All-electrical switching of a topological non-collinear antiferromagnet at room temperature.

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest. However, the all-electrical control of such systems at room temperature, a crucial step toward practical application, has not been reported. Here, using a small writing current density of around 5 × 10 A·cm, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet MnSn, with a strong readout signal at room temperature in the Si/SiO/MnSn/AlO structure, and without external magnetic field or injected spin current.

Tunable Polarized Microcavity Characterized by Magnetic Circular Dichroism Spectrum.

Tunable resonator is a powerful building block in fields like color filtering and optical sensing. The control of its polarization characteristics can significantly expand the applications. Nevertheless, the methods for resonator dynamic tuning are limited.

Azimuth-Resolved Circular Dichroism of Metamaterials.

Chiral optical metamaterials have attracted a great deal of attention due to their intriguing properties with respect to fundamental research and practical applications. For metamaterials with achiral structures, the system composed of metamaterials and obliquely incident light has extrinsic chirality and can produce circular dichroism (CD) effect. However, there have been few studies on the azimuth-dependent CD spectra of achiral metamaterials that have greatly improved our understanding of optical phenomena caused by external chirality.

Current-assisted magnetization reversal in FeGeTe van der Waals homojunctions.

Among the numerous two-dimensional van der Waals (vdW) magnetic materials, FeGeTe (FGT), due to its outstanding properties such as metallicity, high Curie temperature and strong perpendicular magnetic anisotropy, has quickly emerged as a candidate with the most potential for the fabrication of all-vdW spintronic devices. Here, we fabricated a simple vertical homojunction based on two few-layer exfoliated FGT flakes. Under a certain range of external magnetic fields, the magnetization reversal can be achieved by applying a negative or positive pulse current, which can reduce the coercivity through the spin orbit torque of FGT itself in addition to the Joule heat.

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D layered ferromagnetic metal Fe GeTe as spin injection and detection electrodes, are reported. Two distinct transport behaviors are observed: tunneling and metallic, which are assigned to the formation of a pinhole-free tunnel barrier at the Fe GeTe /InSe interface and pinholes in the InSe spacer layer, respectively.

Prospect of Spin-Orbitronic Devices and Their Applications.

Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e.

Deterministic Magnetization Switching Using Lateral Spin-Orbit Torque.

Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external injection of out-of-plane spin currents into the magnetic layer, while an external magnetic field along the electric current direction is generally required for realizing deterministic switching by SOT. Here, deterministic current-induced SOT full magnetization switching by lateral spin-orbit torque in zero external magnetic field is reported.

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure.

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate.

Piezo Voltage Controlled Planar Hall Effect Devices.

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages.

Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors.

A critical challenge for the integration of optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. Generally, a large electrodes spacing in photodetectors is required to absorb sufficient light to maintain high photoresponsivity and reduce the dark current. However, this will limit the optoelectronic integration density.

Multifunctional L1(0) -Mn(1.5)Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product.

A new kind of multifunctional L1(0) -Mn(1.5)Ga film is demonstrated for the first time. These MBE-grown epitaxial films exhibit pronounced magnetic properties at room temperature, including ultrahigh perpendicular coercivity up to 42.

[The study of the behavior of exciton and photon within semiconductor microcavity under hydrostatic pressure].

We studied, for the first time, the strong coupling between exciton and cavity mode within semiconductor microcavity under hydrostatic pressure, and measured the Rabi splitting. The strong coupling between exciton and cavity mode, and so Rabi splitting appear clearly as the applied pressure reaches 0.37-0.

[Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure].

When injected electrons in a quantum well first experience an intersubband relaxation process before their escaping by tunneling through a double-barrier structure behind, the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. That is clearly verified by the relative intensity ratio of the interband photoluminescence spectra for E2-HH1 and E1-HH1 transitions. The observed phenomenon may provide an effective method for controlling intersubband scattering rate, a central issue in so-called quantum cascade lasers, and facilitating the population inversion between subbands in quantum wells.

Evaluation of holonomic quantum computation: adiabatic versus nonadiabatic.

Based on the analytical solution to the time-dependent Schrödinger equations, we evaluate the holonomic quantum computation beyond the adiabatic limit. Besides providing rigorous confirmation of the geometrical prediction of holonomies, the present dynamical resolution offers also a practical means to study the nonadiabaticity induced effects for the universal qubit operations.