Interfacial passivation of CsPbI quantum dots improves the performance of hole-transport-layer-free perovskite photodetectors.

Photodetectors (PDs) suffer from dark current due to defects in the perovskite photosensitive layer. Contact between the photosensitive layer and carbon electrodes could result in recombination of carriers at the interface. In this work, CsPbI quantum dots (QDs) were added between the photosensitive layer and the carbon electrode as the interfacial layer to passivate the surface defects of perovskite layer and improve the energy level matching at the interface.