Analysis of contact resistance in single-walled carbon nanotube channel and graphene electrodes in a thin film transistor.

In this work, we present the experimental investigation on the contact resistance of graphene/single-walled carbon nanotube (SWCNT) junction using transfer length method with the simple equivalent circuit model. We find that p-n like junctions are formed in graphene/SWCNT transistors, and the contact resistance in the junction is observed to be ~ 494 and ~ 617 kΩ in case of metallic SWCNT (m-SWCNT) and semiconducting SWCNT (s-SWCNT), respectively. In addition, the contact resistance increases from 617 to 2316 kΩ as V increases from - 30 to - 10 V.

Direct patterning and biofunctionalization of a large-area pristine graphene sheet.

Direct patterning of streptavidin and NIH 3T3 fibroblast cells was successfully achieved over a large-area pristine graphene sheet on Si/SiO2 by aryl azide-based photografting with the conventional UV lithographic technique and surface-initiated, atom transfer radical polymerization of oligo(ethylene glycol) methacrylate.