Monolithic InSb nanostructure photodetectors on Si using rapid melt growth.

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.

The Effect of Self-Care Nurturance Using the Theory of Modeling and Role-Modeling on Self-Efficacy in Stroke Patients: A Randomized Controlled Trial.

The disability after a stroke results in reduced self-care capacity and lower levels of self-efficacy in survivors. Exploiting a holistic self-care plan to strengthen internal resources in clients can be thus deemed as an effective solution. This study aimed to determine the effect of self-care nurturance using the Theory of Modeling/Role-Modeling (TMRM) on self-efficacy in stroke clients.

Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs.

Here we report on the experimental results and advanced self-consistent real device simulations revealing a fundamental insight into the non-linear optical response of n-i-n InP nanowire array photoconductors to selective 980 nm excitation of 20 axially embedded InAsP quantum discs in each nanowire. The optical characteristics are interpreted in terms of a photogating mechanism that results from an electrostatic feedback from trapped charge on the electronic band structure of the nanowires, similar to the gate action in a field-effect transistor. From detailed analyses of the complex charge carrier dynamics in dark and under illumination was concluded that electrons are trapped in two acceptor states, located at 140 and 190 meV below the conduction band edge, at the interface between the nanowires and a radial insulating SiO cap layer.