Substrate Dependence of CdSe/ZnS Quantum-Dot Light-Emitting Diodes: A Comparative Study between Rigid Glass and Flexible Plastic Substrates.

The purpose of this study was to investigate the effect of substrate characteristics on the performance of quantum-dot light-emitting diodes (QLEDs) with the aim of developing high-performance flexible QLEDs. Specifically, we compared QLEDs made with a flexible polyethylene naphthalate (PEN) substrate to those made with a rigid glass substrate, using the same materials and structure except for the substrates. Our findings indicate that the PEN QLED had a 3.

Quantum Mechanical Analysis Based on Perturbation Theory of CdSe/ZnS Quantum-Dot Light-Emission Properties.

A simulation of quantum dot (QD) energy levels was designed to reproduce a quantum mechanical analytic method based on perturbation theory. A Schrödinger equation describing an electron-hole pair in a QD was solved, in consideration of the heterogeneity of the material parameters of the core and shell. The equation was solved numerically using single-particle basis sets to obtain the eigenstates and energies.

Flexible CdSe/ZnS Quantum-Dot Light-Emitting Diodes with Higher Efficiency than Rigid Devices.

Fabrication of high-performance, flexible quantum-dot light-emitting diodes (QLEDs) requires the reliable manufacture of a flexible transparent electrode to replace the conventional brittle indium tin oxide (ITO) transparent electrode, along with flexible substrate planarization. We deposited a transparent oxide/metal/oxide (OMO) electrode on a polymer planarization layer and co-optimized both layers. The visible transmittance of the OMO electrode on a polyethylene terephthalate substrate increased markedly.

High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue.

Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-Si transistor performance.

Thin-film transistor (TFT) is a key component of active-matrix flat-panel displays (AMFPDs). These days, the low-temperature poly silicon (LTPS) TFTs are to match with advanced AMFPDs such as the active matrix organic light-emitting diode (AMOLED) display, because of their high mobility for fast pixel switching. However, the manufacturing process of LTPS TFT is quite complicated, costly, and scale-limited.