Publications by authors named "Honore Djieutedjeu"

Designing crystalline solids in which intrinsically and extremely low lattice thermal conductivity mainly arises from their unique bonding nature rather than structure complexity and/or atomic disorder could promote thermal energy manipulation and utilization for applications ranging from thermoelectric energy conversion to thermal barrier coatings. Here, we report an extremely low lattice thermal conductivity of ∼0.34 W m K at 300 K in the new complex sulfosalt MnPbSbS.

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Ferromagnetic semiconductors (FMSs) featuring a high Curie transition temperature ( T) and a strong correlation between itinerant carriers and localized magnetic moments are of tremendous importance for the development of practical spintronic devices. The realization of such materials hinges on the ability to generate and manipulate a high density of itinerant spin-polarized carriers and the understanding of their responses to external stimuli. In this study, we demonstrate the ability to tune magnetic ordering in the p-type FMS FeSbSn Se (0 ≤ x ≤ 0.

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PbBiSe, the selenium analogue of heyrovsyite, crystallizes in the orthorhombic space group Cmcm (#63) with a = 4.257(1) Å, b = 14.105(3) Å, and c = 32.

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Single-phase polycrystalline powders of Fe(1-x)Sn(x)Sb2Se4 (x = 0 and 0.13) were synthesized by a solid-state reaction of the elements at 773 K. X-ray diffraction on Fe0.

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The discovery of n-type ferromagnetic semiconductors (n-FMSs) exhibiting high electrical conductivity and Curie temperature (Tc) above 300 K would dramatically improve semiconductor spintronics and pave the way for the fabrication of spin-based semiconducting devices. However, the realization of high-Tc n-FMSs and p-FMSs in conventional high-symmetry semiconductors has proven extremely difficult due to the strongly coupled and interacting magnetic and semiconducting sublattices. Here we show that decoupling the two functional sublattices in the low-symmetry semiconductor FeBi2Se4 enables unprecedented coexistence of high n-type electrical conduction and ferromagnetism with Tc ≈ 450 K.

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Pb(7)Bi(4)Se(13) crystallizes in the monoclinic space group C2/m (No. 12) with a = 13.991(3) Å, b = 4.

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Engineering the atomic structure of an inorganic semiconductor to create isolated one-dimensional (1D) magnetic subunits that are embedded within the semiconducting crystal lattice can enable chemical and electronic manipulation of magnetic ordering within the magnetic domains, paving the way for (1) the investigation of new physical phenomena such as the interactions between electron transport and localized magnetic moments at the atomic scale and (2) the design and fabrication of geometrically frustrated magnetic materials featuring cooperative long-range ordering with large magnetic moments. We report the design, synthesis, crystal structure and magnetic behavior of (MnxPb2-x)Pb2Sb4Se10, a family of three-dimensional manganese-bearing main-group metal selenides featuring quasi-isolated [(MnxPb2-x)3Se30]∞ hexanuclear magnetic ladders coherently embedded and uniformly distributed within a purely inorganic semiconducting framework, [Pb2Sb4Se10]. Careful structural analysis of the magnetic subunit, [(MnxPb2-x)3Se30]∞ and the temperature dependent magnetic susceptibility of (MnxPb2-x)Pb2Sb4Se10, indicate that the compounds are geometrically frustrated 1D ferromagnets.

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Several compositions of manganese-tin-bismuth selenide solid-solution series, Mn(1-x)Sn(x)Bi(2)Se(4) (x = 0, 0.3, 0.75), were synthesized by combining high purity elements in the desired ratio at moderate temperatures.

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