A Review on the Progress of Optoelectronic Devices Based on TiO Thin Films and Nanomaterials.

Titanium dioxide (TiO) is a kind of wide-bandgap semiconductor. Nano-TiO devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes.

Continuous-wave Y-band planar BWO with wide tunable bandwidth.

A high performance continuous-wave (CW) backward wave oscillator (BWO) with planar slow wave structure (SWS) and sheet electron beam in Y-band is presented in this paper. The mode selection is discussed by studying the dispersion curve of SWSs, distributions of the electric field, and particle-in-cell simulation results, showing that the designed BWO operates in the fundamental mode TM. The planar SWSs are fabricated by using the UV-LIGA technology with the processing error less than 0.

A study on inorganic phase-change resist Ge2Sb2(1-x)Bi2xTe5 and its mechanism.

The inorganic phase-change photoresist Ge2Sb1.5Bi0.5Te5 has a lot of advantages such as the two-sides of the photoresist, a large difference in the etching rate between it and Si, and so on, making it a promising candidate for use in the full-vacuum manufacture of the next generation ultra-large scale integrated circuits (ULSI).

The study on SiO2 pattern fabrication using Ge1.5Sn0.5Sb2Te5 as resists.

Ge1.5Sn0.5Sb2Te5 (GSST) can be easily induced to phase transition from amorphous state to crystalline state by a laser direct writing (LDW) system.