InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors.

A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band bandgap engineered GaAsSb/AlGaAsSb/T2SL (InGa As/GaAsSb) infrared photodetector, vertically stacked in a monolithic grown on InP substrate, is demonstrated. GaAsSb NIR sub-detector and T2SL eSWIR sub-detector are operated under small forward and reverse bias, respectively. The GaAsSb sub-detector functions within the NIR spectrum, with a 100% cutoff wavelength of 1.

Noise equivalent temperature difference study of type-II superlattice MWIR focal plane arrays for high operating temperature performance.

Achieving high operating temperature (HOT) plays a crucial role in miniaturizing type-II superlattice (T2SL) mid-wavelength infrared (MWIR) focal plane arrays (FPAs). However, their full potential has yet to be realized due to a lack of complete understanding of their operation from the perspective of detection principles. Here, by investigating the photon transmission path and optoelectronic performance of the simulated devices, a detailed noise equivalent temperature difference (NETD) model of the T2SL MWIR FPAs was established.

High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra.

High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.