Emerging ultra-narrow-band cyan-emitting phosphor for white LEDs with enhanced color rendition.

Phosphor-converted white LEDs rely on combining a blue-emitting InGaN chip with yellow and red-emitting luminescent materials. The discovery of cyan-emitting (470-500 nm) phosphors is a challenge to compensate for the spectral gap and produce full-spectrum white light. NaKLiSiO:Eu (NKLSO:Eu) phosphor was developed with impressive properties, providing cyan emission at 486 nm with a narrow full width at half maximum (FWHM) of only 20.

Next-Generation Narrow-Band Green-Emitting RbLi(Li SiO ) :Eu Phosphor for Backlight Display Application.

The discovery of high efficiency narrow-band green-emitting phosphors is a major challenge in backlighting light-emitting diodes (LEDs). Benefitting from highly condensed and rigid framework structure of UCr C -type compounds, a next-generation narrow green emitter, RbLi(Li SiO ) :Eu (RLSO:Eu ), has emerged in the oxide-based family with superior luminescence properties. RLSO:Eu phosphor can be efficiently excited by GaN-based blue LEDs, and shows green emission at 530 nm with a narrow full width at half maximum of 42 nm, and very low thermal quenching (103%@150 °C of the integrated emission intensity at 20 °C), however its chemical stability needs to be improved later.

Learning from a Mineral Structure toward an Ultra-Narrow-Band Blue-Emitting Silicate Phosphor RbNa (Li SiO ) :Eu.

Learning from natural mineral structures is an efficient way to develop potential host lattices for applications in phosphor converted (pc)LEDs. A narrow-band blue-emitting silicate phosphor, RbNa (Li SiO ) :Eu (RNLSO:Eu ), was derived from the UCr C -type mineral model. The broad excitation spectrum (320-440 nm) indicates this phosphor can be well matched with the near ultraviolet (n-UV) LED chip.