Tunable electronic and photoelectric properties of Janus group-III chalcogenide monolayers and based heterostructures.

Janus group-III chalcogenide monolayers and based heterostructures with breaking vertical structural symmetry offer additional prospects in the upcoming high-performance photoelectric devices. We studied the geometrical, electronic, and photoelectric properties of Janus group-III chalcogenide monolayers and heterostructures. The most energy favorable stacking design of ten vertical heterostructures are considered.

Van der Waals epitaxial growth and optoelectronics of a vertical MoS/WSe p-n junction.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe/MoS produced by a chemical vapor deposition method.

Rational Kinetics Control toward Universal Growth of 2D Vertically Stacked Heterostructures.

The rational control of the nucleation and growth kinetics to enable the growth of 2D vertical heterostructure remains a great challenge. Here, an in-depth study is provided toward understanding the growth mechanism of transition metal dichalcogenides (TMDCs) vertical heterostructures in terms of the nucleation and kinetics, where active clusters with a high diffusion barrier will induce the nucleation on top of the TMDC templates to realize vertical heterostructures. Based on this mechanism, in the experiment, through rational control of the metal/chalcogenide ratio in the vapor precursors, effective manipulation of the diffusion barrier of the active clusters and precise control of the heteroepitaxy direction are realized.

Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures.

Low dimensional heterostructures have potential applications in information, sensing, and energy-related technologies. In order to obtain high-quality low dimensional heterostructures, an essential method is tuning chemical composition in a single nanostructure to obtain two or multiple components with well-matched electronic band structures. Here, we present a tutorial review of a unique chemical vapor growth approach with in situ switchable solid chemical sources that can build composition-modulated chalcogenide heterostructures in one-dimensional nanowires, quasi one-dimensional nanobelts and two-dimensional atomic layered nanosheets in a controlled manner.

High-Quality In-Plane Aligned CsPbX Perovskite Nanowire Lasers with Composition-Dependent Strong Exciton-Photon Coupling.

Cesium lead halide perovskite nanowires have emerged as promising low-dimensional semiconductor structures for integrated photonic applications. Understanding light-matter interactions in a nanowire cavity is of both fundamental and practical interest in designing low-power-consumption nanoscale light sources. In this work, high-quality in-plane aligned halide perovskite CsPbX (X = Cl, Br, I) nanowires are synthesized by a vapor growth method on an annealed M-plane sapphire substrate.

Controllable Growth and Formation Mechanisms of Dislocated WS Spirals.

Two-dimensional (2D) layered metal dichalcogenides can form spiral nanostructures by a screw-dislocation-driven mechanism, which leads to changes in crystal symmetry and layer stackings that introduce attractive physical properties different from their bulk and few-layer nanostructures. However, controllable growth of spirals is challenging and their growth mechanisms are poorly understood. Here, we report the controllable growth of WS spiral nanoplates with different stackings by a vapor phase deposition route and investigate their formation mechanisms by combining atomic force microscopy with second harmonic generation imaging.

Strain-Tuning Atomic Substitution in Two-Dimensional Atomic Crystals.

Atomic substitution offers an important route to achieve compositionally engineered two-dimensional nanostructures and their heterostructures. Despite the recent research progress, the fundamental understanding of the reaction mechanism has still remained unclear. Here, we reveal the atomic substitution mechanism of two-dimensional atomic layered materials.

Nonlinear photoluminescence in monolayer WS: parabolic emission and excitation fluence-dependent recombination dynamics.

Recombination dynamics during photoluminescence (PL) in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are complicated and can be easily affected by the surroundings because of their atomically thin structures. Herein, we studied the excitation power and temperature dependence of the recombination dynamics on the chemical vapor deposition-grown monolayer WSvia a combination of Raman, PL, and time-resolved PL spectroscopies. We found a red shift and parabolic intensity increase in the PL emission of the monolayer WS with the increasing excitation power and the decay time constants corresponding to the recombination of trions and excitons from transient PL dynamics.

Broken Symmetry Induced Strong Nonlinear Optical Effects in Spiral WS Nanosheets.

Transition metal dichalcogenides (TMDs) have provided a fundamental stage to study light-matter interactions and optical applications at the atomic scale due to their ultrathin thickness and their appropriate band gap in the visible region. Here, we report the strong nonlinear optical effects, including second-harmonic generation (SHG) and third-harmonic generation (THG) in spiral WS structures. SHG intensity quadratically increases with layer numbers, other than diminishing the oscillation of 2H stacking TMDs.

Spatially composition-modulated two-dimensional WSSe nanosheets.

Controllable synthesis of two-dimensional (2D) transition-metal dichalcogenides (TMDs) with tunable bandgaps is vital for their applications in nanophotonics, due to its efficient modulation of the physical and chemical properties of these atomic layered nanostructures. Here we report for the first time, the controllable synthesis of spatially composition-modulated WSSe nanosheets and WS-WSSe lateral heterostructures by a developed one-step chemical vapor deposition (CVD) approach, as well as the understanding of their growth mechanism. During the growth, the composition was optically tuned along the plane of the atomic layered nanosheets through the precise control of evaporation sources.

Vapor Growth and Tunable Lasing of Band Gap Engineered Cesium Lead Halide Perovskite Micro/Nanorods with Triangular Cross Section.

Although great efforts have been devoted to the synthesis of halide perovskites nanostructures, vapor growth of high-quality one-dimensional cesium lead halide nanostructures for tunable nanoscale lasers is still a challenge. Here, we report the growth of high-quality all-inorganic cesium lead halide alloy perovskite micro/nanorods with complete composition tuning by vapor-phase deposition. The as-grown micro/nanorods are single-crystalline with a triangular cross section and show strong photoluminescence which can be tuned from 415 to 673 nm by varying the halide composition.

Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution.

Composition-controlled growth of two-dimensional layered semiconductor heterostructures is crucially important for their applications in multifunctional integrated photonics and optoelectronics devices. Here, we report the realization of composition completely modulated layered semiconductor MoS-MoSSe (0 < x < 1) lateral heterostructures via the controlled layer-selected atomic substitution of pregrown stacking MoS, with a bilayer located at the center of a monolayer. Through controlling the reaction time, S at the monolayer MoS at the peripheral area can be selectively substituted by Se atoms at different levels, while the bilayer region at the center retains the original composition.

Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets.

Quasi-one-dimensional (1D) nanostructures have been extensively explored for electronic and optoelectronic devices on account of their unique morphologies and versatile physical properties. Here, we report the successful synthesis of GaInAsSb alloy nanosheets by a simple chemical vapor deposition method. The grown GaInAsSb alloy nanosheets are pure zinc-blende single crystals, which show nanosize-induced extraordinary optoelectronic properties as compared with bulk materials.

High on/off ratio photosensitive field effect transistors based on few layer SnS2.

2D layered SnS2 nanosheets have attracted increasing research interest due to their highly anisotropic structural, electrical, optical, and mechanical properties. Here, through mechanical exfoliation, few-layer SnS2 was obtained from as-synthesized many-layered bulk SnS2. Micro-characterization and Raman study demonstrate the hexagonal symmetry structure of the nanosheets so fabricated.

Synthesis of WS2xSe2-2x Alloy Nanosheets with Composition-Tunable Electronic Properties.

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently emerged as a new class of atomically thin semiconductors for diverse electronic, optoelectronic, and valleytronic applications. To explore the full potential of these 2D semiconductors requires a precise control of their band gap and electronic properties, which represents a significant challenge in 2D material systems. Here we demonstrate a systematic control of the electronic properties of 2D-TMDs by creating mixed alloys of the intrinsically p-type WSe2 and intrinsically n-type WS2 with variable alloy compositions.

Lateral Growth of Composition Graded Atomic Layer MoS(2(1-x))Se(2x) Nanosheets.

Band gap engineering of transition-metal dichalcogenides is an important task for their applications in photonics, optoelectronics, and nanoelectronics. We report for the first time the continuous lateral growth of composition graded bilayer MoS(2(1-x))Se(2x) alloys along single triangular nanosheets by an improved chemical vapor deposition approach. From the center to the edge of the nanosheet, the composition can be gradually tuned from x = 0 (pure MoS2) to x = 0.

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions.

Two-dimensional layered semiconductors such as MoS₂ and WSe₂ have attracted considerable interest in recent times. Exploring the full potential of these layered materials requires precise spatial modulation of their chemical composition and electronic properties to create well-defined heterostructures. Here, we report the growth of compositionally modulated MoS₂-MoSe₂ and WS₂-WSe₂ lateral heterostructures by in situ modulation of the vapour-phase reactants during growth of these two-dimensional crystals.

Growth of alloy MoS(2x)Se2(1-x) nanosheets with fully tunable chemical compositions and optical properties.

Band gap engineering of atomically thin two-dimensional layered materials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, a simple one-step chemical vapor deposition approach for the simultaneous growth of alloy MoS2xSe2(1-x) triangular nanosheets with complete composition tunability. Both the Raman and the photoluminescence studies show tunable optical properties consistent with composition of the alloy nanosheets.

Room-temperature near-infrared photodetectors based on single heterojunction nanowires.

Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed.