Ultralow-pressure-driven polarization switching in ferroelectric membranes.

Van der Waals integration of freestanding perovskite-oxide membranes with two-dimensional semiconductors has emerged as a promising strategy for developing high-performance electronics, such as field-effect transistors. In these innovative field-effect transistors, the oxide membranes have primarily functioned as dielectric layers, yet their great potential for structural tunability remains largely untapped. Free of epitaxial constraints by the substrate, these freestanding membranes exhibit remarkable structural tunability, providing a unique material system to achieve huge strain gradients and pronounced flexoelectric effects.

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning.

The growing computational demand in artificial intelligence calls for hardware solutions that are capable of in situ machine learning, where both training and inference are performed by edge computation. This not only requires extremely energy-efficient architecture (such as in-memory computing) but also memory hardware with tunable properties to simultaneously meet the demand for training and inference. Here we report a duplex device structure based on a ferroelectric field-effect transistor and an atomically thin MoS channel, and realize a universal in-memory computing architecture for in situ learning.

Approaching the quantum limit in two-dimensional semiconductor contacts.

The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance. Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited. In particular, the contact resistance has not surpassed that of covalently bonded metal-semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues.

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.

Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays.

Sub-thermionic, ultra-high-gain organic transistors and circuits.

The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics. Here, by combining solution-processed monolayer organic crystal, ferroelectric HfZrO gating and van der Waals fabrication, we realize flexible OTFTs that simultaneously deliver high transconductance and sub-60 mV/dec switching, under one-volt operating voltage. The overall optimization of transconductance, subthreshold swing and output resistance leads to transistor intrinsic gain and amplifier voltage gain over 5.