Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits.

Hafnium-based ferroelectric memories are a promising approach to enhancing integrated circuit performance, offering advantages such as miniaturization, compatibility with CMOS technology, fast read and write speeds, non-volatility, and low power consumption. However, FeRAM (Ferroelectric Random Access Memory) still faces challenges related to endurance and retention susceptibility to process variations. Hence, testing and obtaining the core parameters of ferroelectric capacitors continuously is essential to investigate these phenomena and explore the potential solution.

Temporally gene knockout using heat shock-inducible genome-editing system in plants.

Clustered regularly interspaced short palindromic repeat (CRISPR)/CRISPR-associated nuclease 9 (Cas9) has emerged as a powerful tool to generate targeted loss-of-function mutations for functional genomic studies. As a next step, tools to generate genome modifications in a spatially and temporally precise manner will enable researchers to further dissect gene function. Here, we present two heat shock-inducible genome-editing (IGE) systems that efficiently edit target genes when the system is induced, thus allowing us to target specific developmental stages.

Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes.

Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many issues, which can significantly degrade RRAM performance.