Tuning the exposure of BiVO-{010} facets to enhance the N photofixation performance.

Effective separation of photoexcited carriers and chemisorption of the N molecule are two key issues to efficient nitrogen photofixation. The spatial charge separation of BiVO with anisotropic exposed facets, namely the transfer of photoexcited electrons and holes to {010} and {110} facets, respectively, helps to enhance the separation ability of photogenerated carriers. Theoretical calculation results predict that a surface oxygen vacancy is easier to form on the (010) facet than on the (110) facet of BiVO.

Facilitated magnesium atom adsorption and surface diffusion kinetics artificial bismuth-based interphases.

Robust bismuth-based interphases, comprised of bismuth and bismuth oxides, were developed using galvanic replacement reactions. Facilitated Mg atom adsorption and distinct interfacial Mg atom migration were demonstrated, greatly lowering the electrochemical energy penalty (23 mV for the nucleation process and 69 mV for the growth process at 1.0 mA cm).