Influence of annealing pretreatment in different atmospheres on crystallization quality and UV photosensitivity of gallium oxide films.

Due to their high wavelength selectivity and strong anti-interference capability, solar-blind UV photodetectors hold broad and important application prospects in fields like flame detection, missile warnings, and secure communication. Research on solar-blind UV detectors for amorphous GaO is still in its early stages. The presence of intrinsic defects related to oxygen vacancies significantly affects the photodetection performance of amorphous GaO materials.

Atomic-Level Sn Doping Effect in GaO Films Using Plasma-Enhanced Atomic Layer Deposition.

In this work, the atomic level doping of Sn into GaO films was successfully deposited by using a plasma-enhanced atomic layer deposition method. Here, we systematically studied the changes in the chemical state, microstructure evolution, optical properties, energy band alignment, and electrical properties for various configurations of the Sn-doped GaO films. The results indicated that all the films have high transparency with an average transmittance of above 90% over ultraviolet and visible light wavelengths.

Atomic Layer Deposition of GaO/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

The resistive switching behavior in resistive random access memories (RRAMs) using atomic-layer-deposited GaO/ZnO composite film as the dielectric was investigated. By alternatively atomic-layer-depositing GaO and ZnO with different thickness, we can accurately control the oxygen vacancy concentration. When regulating ZnO to ∼31%, the RRAMs exhibit a forming-free property as well as outstanding performance, including the ratio of a high resistance state to the low resistance state of 1000, retention time of more than 1 × 10 s, and the endurance of 100.

Hierarchical highly ordered SnO nanobowl branched ZnO nanowires for ultrasensitive and selective hydrogen sulfide gas sensing.

Highly sensitive and selective hydrogen sulfide (HS) sensors based on hierarchical highly ordered SnO nanobowl branched ZnO nanowires (NWs) were synthesized via a sequential process combining hard template processing, atomic-layer deposition, and hydrothermal processing. The hierarchical sensing materials were prepared in situ on microelectromechanical systems, which are expected to achieve high-performance gas sensors with superior sensitivity, long-term stability and repeatability, as well as low power consumption. Specifically, the hierarchical nanobowl SnO@ZnO NW sensor displayed a high sensitivity of 6.

Modification of 1D TiO nanowires with GaON by atomic layer deposition for TiO@GaON core-shell nanowires with enhanced photoelectrochemical performance.

As a well-known semiconductor that can catalyse the oxygen evolution reaction, TiO2 has been extensively investigated for its solar photoelectrochemical water properties. Unmodified TiO2 shows some issues, particularly with respect to its photoelectrochemical performance. In this paper, we present a strategy for the controlled deposition of controlled amounts of GaOxNy cocatalysts on TiO2 1D nanowires (TiO2@GaOxNy core-shell) using atomic layer deposition.

Precise preparation of WO@SnO core shell nanosheets for efficient NH gas sensing.

Development of high-performance ammonia (NH) sensor is imperative for monitoring NH in the living environment. In this work, to obtain a high performance NH gas sensor, structurally well-defined WO@SnO core shell nanosheets with a controllable thickness of SnO shell layer have been employed as sensing materials. The prepared core shell nanosheets were used to obtain a miniaturized gas sensor based on micro-electro-mechanical system (MEMS).

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-GaO Nanobelt Field-Effect Transistors.

The issue of contacts between the electrode and channel layer is crucial for wide-bandgap semiconductors, especially the β-GaO due to its ultra-large bandgap (4.6-4.9 eV).

Atomic Layer Deposition of Buffer Layers for the Growth of Vertically Aligned Carbon Nanotube Arrays.

Vertically aligned carbon nanotube arrays (VACNTs) show a great potential for various applications, such as thermal interface materials (TIMs). Besides the thermally oxidized SiO, atomic layer deposition (ALD) was also used to synthesize oxide buffer layers before the deposition of the catalyst, such as AlO, TiO, and ZnO. The growth of VACNTs was found to be largely dependent on different oxide buffer layers, which generally prevented the diffusion of the catalyst into the substrate.

Systematic Study of the SiO Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiO/SiO₂ Super-Lattice.

Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiO film with different stoichiometry by plasma enhanced atomic layer deposition.

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

In this study, silicon nitride (SiN) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates.

Predominance of neurologic diseases in international aeromedical transportation.

Background: International travel industry in Taiwan is expanding. The number of people traveling abroad was approximately 480,000 people in 1980; 2,940,000 in 1990; 7,320,000 in 2000, and in 2007, it has reached 8,960,000, which was more than one third of total population. Air medical transportation will be necessary when local medical facilities do not approximate the international standards.