Publications by authors named "Hong-Long Shi"

Electron diffraction techniques in transmission electron microscopy (TEM) have been successfully employed for determining the unit-cell parameters of crystal phases, albeit they exhibit a limited accuracy compared with X-ray or neutron diffraction, and they often involve a tedious measurement procedure. Here, a new package for determining unit-cell parameters from a single electron diffraction pattern has been developed. The essence of the package is to reconstruct a 3D reciprocal primitive cell from a single electron diffraction pattern containing both zero-order Laue zone and high-order Laue zone reflections.

View Article and Find Full Text PDF

The prominent role of oxygen vacancies in the photocatalytic performance of bismuth tungsten oxides is well recognized, while the underlying formation mechanisms remain poorly understood. Here, we use the transmission electron microscopy to investigate the formation of oxygen vacancies and the structural evolution of BiWO under in situ electron irradiation. Our experimental results reveal that under 200 keV electron irradiation, the breaking of relatively weak Bi-O bonds leads to the formation of oxygen vacancies in BiWO.

View Article and Find Full Text PDF

We fabricated the nickel chains by a facile wet chemical method. The morphology of nickel chains were tailored by adjusting the amount of PVP during the synthesis process. Both the complex permittivity and permeability of the three-dimensional (3D) nets constructed by nickel chains present strong dependences on temperature in the frequency range of 8.

View Article and Find Full Text PDF

Ideal electromagnetic attenuation material should not only shield the electromagnetic interference but also need strong absorption. Lightweight microwave absorber with thermal stability and high efficiency is a highly sought-after goal of researchers. Tuning microwave absorption to meet the harsh requirements of thermal environments has been a great challenge.

View Article and Find Full Text PDF

We fabricated NiO nanorings on SiC, a novel hierarchical architecture, by a facile two-step method. The dielectric properties depend on temperature and frequency in the range from 373 to 773 K and X band. The imaginary part and loss tangent increase more than four times and three times with increasing temperature, respectively.

View Article and Find Full Text PDF