Demonstration of 1 V Reliable FeRAM Operation: Engineering Using Quasi-Chirality of HfZrO in a Nanolaminate Structure.

Hafnia thin films are known to demonstrate excellent performance with strong ferroelectricity and high scalability, making them promising candidates for CMOS-compatible materials. However, the reliability of ferroelectric devices must be further improved. This study developed a HfZrO ferroelectric capacitor with a nanolaminate structure that operated at remarkably low voltages, demonstrating excellent retention (>10 years/85 °C) and endurance (>10 cycles).

Improvement of endurance and switching speed in HfZrOthin films using a nanolaminate structure.

To improve the endurance and polarization switching speed of HfZrO(HZO) ferroelectric films, we designed a 10 nm HfZrO + ZrO(HZZ) nanolaminate structure. Three films with different ZrOinterlayers thicknesses were compared to find the optimal condition to implement the effect of the topological domain wall which was proposed recently. The HZZ film were deposited by repeatedly stacking ten HZO (∼0.

High polarization and wake-up free ferroelectric characteristics in ultrathin HfZrOdevices by control of oxygen-deficient layer.

The formation of an interfacial layer is believed to affect the ferroelectric properties in HfObased ferroelectric devices. The atomic layer deposited devices continue suffering from a poor bottom interfacial condition, since the formation of bottom interface is severely affected by atomic layer deposition and annealing process. Herein, the formation of bottom interfacial layer was controlled through deposition of different bottom electrodes (BE) in device structure W/HZO/BE.

Effects of high pressure oxygen annealing on HfZrOferroelectric device.

We report a high-pressure oxygen annealing (HPOA) process to improve the performance of TiN/HfZrO(HZO)/TiN devices by controlling the number of oxygen vacancies and carbon contaminants. The ferroelectric properties of HZO film after HPOA at 250 °C for 30 min under different oxygen pressures from 0 to 80 bar were evaluated by electrical and structural characterizations. We found that a sample treated with an oxygen pressure at 40 bar exhibited large switchable polarization (2P) of approximately 38 and 47C cmin its pristine and wake-up states, respectively.

Homozygous MAPT R406W mutation causing FTDP phenotype: A unique instance of a unique mutation.

Frontotemporal dementia is a neurodegenerative disorder among adults. An autosomal-dominantly form of frontotemporal dementia and parkinsonism linked to chromosome 17q21.2 (FTDP-17) was defined in 1996.

Mutation analysis of SPAST, ATL1, and REEP1 in Korean Patients with Hereditary Spastic Paraplegia.

Background And Purpose: Hereditary spastic paraplegia (HSP) is a genetically heterogeneous group of neurodegenerative disorders that are characterized by progressive spasticity and weakness of the lower limbs. Mutations in the spastin gene (SPAST) are the most common causes of HSP, accounting for 40-67% of autosomal dominant HSP (AD-HSP) and 12-18% of sporadic cases. Mutations in the atlastin-1 gene (ATL1) and receptor expression-enhancing protein 1 gene (REEP1) are the second and third most common causes of AD-HSP, respectively.

Limb-girdle myasthenia with tubular aggregates associated with novel GFPT1 mutations.

Introduction: Limb-girdle myasthenia with tubular aggregates (LGM with TAs) is a subtype of congenital myasthenic syndrome caused by recessive mutations of glutamine-fructose-6-phosphate transaminase 1 (GFPT1).

Methods: Clinical and neurophysiological assessment was made in a Korean boy who had proximal limb muscle weakness. Findings suggested a diagnosis of congenital myasthenic syndrome.