Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications.

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics.

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes.

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.

Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods.

The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devices.

We propose a four-bit-per-cell program method using a two-step sequence with substrate-bias assisted hot electron (SAHE) injection into the charge trap flash memory devices in order to overcome the limitations of conventional four-bit program methods, which use channel hot electron (CHE) injection. With this proposed method, a localized charge injection near the junction edge with an acceptable read margin was clearly observed, along with a threshold voltage difference of 1 V between the forward and the reverse read. In addition, a multi-level storage was easily obtained using a drain voltage step of 1 V at each level of the three programmed states, along with a fast program time of 1 micros.

Improved light extraction from large-area vertical light-emitting diodes with deep hole-patterns using nanosphere lithography.

The authors report on an improved light extraction method from large-area vertical light emitting diodes (VLEDs) with deep hole-patterns fabricated using nanosphere lithography. In order to produce the ordered deep-hole patterns on the n-type GaN surface, a 150 nm thick Ni dot mask formed via a lift-off process of the Ni coated onto a 500 nm diameter polystylene bead array was employed to enable deep etching. Three VLEDs-one as a reference with no patterns, and two with periodic 360 nm diameter hole patterns, one with 1.

Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/silicon capacitors with blocking oxide layers formed under the radical oxidation process.

We propose a Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure whose blocking oxide is formed by radical oxidation on the silicon nitride (Si3N4) layer to improve the electrical and reliability characteristics. We directly compare the electrical and reliability properties of the MONOS capacitors with two different blocking oxide (SiO2) layers, which are called a "radical oxide" grown by the radical oxidation and a "CVD oxide" deposited by chemical vapor deposition (CVD) respectively. The MONOS capacitor with a radical oxide shows a larger C-V memory window of 3.