In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber's interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield.
View Article and Find Full Text PDFRandom lasers are promising in the spectral regime, wherein conventional lasers are unavailable, with advantages of low fabrication costs and applicability of diverse gain materials. However, their practical application is hindered by high threshold powers, low power efficiency, and difficulties in light collection. Here, we demonstrate a power-efficient easy-to-fabricate non-resonant laser using a deep hole on a porous gain material.
View Article and Find Full Text PDFIn the semiconductor fabrication industry, high-power plasma is indispensable to obtain a high aspect ratio of chips. For applications to ceramic components including the dielectric window and ring in the semiconductor etching chamber, the YO ceramics have attracted interest recently based on excellent erosion resistance. When a high bias voltage is applied in a plasma environment containing fluorine gas, both chemical etching and ion bombardment act simultaneously on the ceramic components.
View Article and Find Full Text PDFNon-resonant lasers exhibit the potential for stable and consistent narrowband light sources. Furthermore, non-resonant lasers do not require well-defined optics, and thus has considerably diversified the available types of laser gain materials including powders, films, and turbid ceramics. Despite these intrinsic advantages, the practical applications of non-resonant lasers have been limited so far, mainly because of their low power efficiency and omnidirectional emission.
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