Composition analysis of β-(In Ga )O thin films coherently grown on (010) β-GaO via mist CVD.

This study investigates the compositional analysis and growth of β-(In Ga )O thin films on (010) β-GaO substrates using mist chemical vapor deposition (CVD), including the effects of the growth temperature. We investigated the correlation between In composition and -axis length in coherently grown films, vital for developing high-electron-mobility transistors and other devices based on β-(In Ga )O. Analytical techniques, including X-ray diffraction (XRD), reciprocal space mapping, and atomic force microscopy, were employed to evaluate crystal structure, strain relaxation, and surface morphology.

Strain-Induced Modulation of Resistive Switching Temperature in Epitaxial VO Thin Films on Flexible Synthetic Mica.

The resistive switching temperature associated with the metal-insulator transition (MIT) of epitaxial VO thin films grown on flexible synthetic mica was modulated by bending stress. The resistive switching temperature of polycrystalline VO and VO thin films, initially grown on synthetic mica without a buffer layer, was observed not to shift with bending stress. By inserting a SnO buffer layer, epitaxial growth of the VO (010) thin film was achieved, and the MIT temperature was found to vary with the bending stress.

Single-Domain and Atomically Flat Surface of κ-GaO Thin Films on FZ-Grown ε-GaFeO Substrates via Step-Flow Growth Mode.

Herein, single-domain κ-GaO thin films were grown on FZ-grown ε-GaFeO substrates via a step-flow growth mode. The ε-GaFeO possessing the same crystal structure and similar lattice parameters as those of the orthorhombic κ-GaO facilitated the growth of κ-GaO thin films, as observed by the X-ray diffraction (XRD) analysis. Furthermore, the surface morphologies of the κ-GaO thin films exhibited a step-terrace and atomically flat structure.