Publications by authors named "Hiroshi Kumigashira"

Solid-phase rare earth monoxides have been recently synthesized thin film epitaxy. However, it has been difficult to synthesize heavy rare earth monoxides owing to their severe chemical instability. In this study, rocksalt-type heavy rare earth monoxides REOs (RE = Tb, Dy, Er) were synthesized for the first time, as single-phase epitaxial thin films.

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Topological insulators (TI) hold significant potential for various electronic and optoelectronic devices that rely on the Dirac surface state (DSS), including spintronic and thermoelectric devices, as well as terahertz detectors. The behavior of electrons within the DSS plays a pivotal role in the performance of such devices. It is expected that DSS appear on a surface of three dimensional(3D) TI by mechanical exfoliation.

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High energy-conversion efficiency (ZT) of thermoelectric materials has been achieved in heavy metal chalcogenides, but the use of toxic Pb or Te is an obstacle for wide applications of thermoelectricity. Here, high ZT is demonstrated in toxic-element free Ba BO (B = Si and Ge) with inverse-perovskite structure. The negatively charged B ion contributes to hole transport with long carrier life time, and their highly dispersive bands with multiple valley degeneracy realize both high p-type electronic conductivity and high Seebeck coefficient, resulting in high power factor (PF).

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The Kondo effect between localized f-electrons and conductive carriers leads to exotic physical phenomena. Among them, heavy-fermion (HF) systems, in which massive effective carriers appear due to the Kondo effect, have fascinated many researchers. Dimensionality is also an important characteristic of the HF system, especially because it is strongly related to quantum criticality.

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Perovskite oxides O continue to be a major focus in materials science. Of particular interest is the interplay between and cations as exemplified by intersite charge transfer (ICT), which causes novel phenomena including negative thermal expansion and metal-insulator transition. However, the ICT properties were achieved and optimized by cationic substitution or ordering.

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Article Synopsis
  • Amorphous semiconductors, like Fe-Sn films, are useful in electronics and energy devices due to their ease of production and high performance.
  • This study shows that even without long-range order, the short-range order of kagome-lattice structures in these amorphous films contributes significantly to their unique electrical and magneto-thermoelectric properties.
  • The findings suggest that understanding the Berry curvature in amorphous materials can pave the way for new topological electronic devices, enhancing their functionality.
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Boron-based two-dimensional (2D) materials are an excellent platform for nanoelectronics applications. Rhombohedral boron monosulfide (r-BS) is attracting particular attention because of its unique layered crystal structure suitable for exploring various functional properties originating in the 2D nature. However, studies to elucidate its fundamental electronic states have been largely limited because only tiny powdered crystals were available, hindering a precise investigation by spectroscopy such as angle-resolved photoemission spectroscopy (ARPES).

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Kagome metals AV_{3}Sb_{5} (A=K, Rb, and Cs) exhibit a characteristic superconducting ground state coexisting with a charge density wave (CDW), whereas the mechanisms of the superconductivity and CDW have yet to be clarified. Here we report a systematic angle-resolved photoemission spectroscopy (ARPES) study of Cs(V_{1-x}Nb_{x})_{3}Sb_{5} as a function of Nb content x, where isovalent Nb substitution causes an enhancement of superconducting transition temperature (T_{c}) and the reduction of CDW temperature (T_{CDW}). We found that the Nb substitution shifts the Sb-derived electron band at the Γ point downward and simultaneously moves the V-derived band around the M point upward to lift up the saddle point (SP) away from the Fermi level, leading to the reduction of the CDW-gap magnitude and T_{CDW}.

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The two-dimensional electron gas (2DEG) formed at interfaces between SrTiO (STO) and other oxide insulating layers is promising for use in efficient spin-charge conversion due to the large Rashba spin-orbit interaction (RSOI). However, these insulating layers on STO prevent the propagation of a spin current injected from an adjacent ferromagnetic layer. Moreover, the mechanism of the spin-current flow in these insulating layers is still unexplored.

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We report the synthesis and optoelectronic properties of high phase-purity (>94 mol %) bulk polycrystals of KCoO-type layered nitrides N ( = Sr, Ba; and = Ti, Zr, Hf), which are expected to exhibit unique electron transport properties originating from their natural two-dimensional (2D) electronic structure, but high-purity intrinsic samples have yet been reported. The bulks were synthesized using a solid-state reaction between NH and N precursors with NaN to achieve high N chemical potential during the reaction. The N bulks are n-type semiconductors with optical band gaps of 1.

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Article Synopsis
  • Metastable cubic (SnPb)Se shows potential as a high mobility semiconductor, but its high carrier concentration and complicated synthesis process limit its use in devices like thin film transistors and solar cells.
  • Researchers report successful growth of (SnCa)Se films, which have a wider bandgap and lower vapor pressure compared to (SnPb)Se, making them easier to produce.
  • The optimized (SnCa)Se films exhibit p-type conduction with low hole concentrations and high mobility, indicating their suitability for semiconductor applications through a simpler deposition method.
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Angle-resolved photoemission spectroscopy using a micro-focused beam spot [micro-angle-resolved photoemission spectroscopy (ARPES)] is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on the synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axis motion, and are vibrationally separated from the ARPES measurement system.

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Topological Dirac semimetals (TDSs) offer an excellent opportunity to realize outstanding physical properties distinct from those of topological insulators. Since TDSs verified so far have their own problems such as high reactivity in the atmosphere and difficulty in controlling topological phases via chemical substitution, it is highly desirable to find a new material platform of TDSs. By angle-resolved photoemission spectroscopy combined with first-principles band-structure calculations, we show that ternary compound BaMgBi is a TDS with a simple Dirac-band crossing around the Brillouin-zone center protected by the C symmetry of crystal.

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Article Synopsis
  • Strong electron repulsion in solids can lead to a phenomenon called the "Mott" metal-to-insulator transition (MIT), where electrons transform from a mobile to a localized state.
  • Understanding this transition has been difficult for over 50 years due to challenges in observing both electronic states.
  • Researchers used angle-resolved photoemission spectroscopy (ARPES) to demonstrate that in vanadium oxide (VO), increasing temperature causes the itinerant conduction band to vanish while a quasi-localized state shifts to higher binding energies.
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  • A significant increase in thermopower is achieved in thin films of the electron oxide LaNiO through heterostructuring, which is not seen in its bulk form.
  • This enhancement, observed in films strained by LaAlO substrates and reduced to three unit cells, shows a tenfold improvement over bulk thermopower due to phonon drag effects and a broader operational temperature range.
  • The enhancement results from the interaction between lattice vibrations and d electrons in the strained LaNiO, driven by phonon leakage from the substrate and capping layer, opening new possibilities for improving thermoelectric materials.
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Diodes, memories, logic circuits, and most other current information technologies rely on the combined use of p- and n-type semiconductors. Although oxide semiconductors have many technologically attractive functionalities, such as transparency and high dopability to enable their use as conducting films, they typically lack bipolar conductivity. In particular, the absence of p-type semiconducting properties owing to the innate electronic structures of oxides represents a bottleneck for the development of practical devices.

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Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene is grown on expensive SiC bulk crystals, while graphene on SiC thin films grown on Si substrates (GOS) exhibits low quality but affordable cost.

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We investigated the electronic structures of mono- and few-layered Ru nanosheets (N layers (L) with N = 1, ~6, and ~9) on Si substrate by ultra-violet and x-ray photoemission spectroscopies. The spectral density of states (DOS) near E of ~6 L and 1 L is suppressed as it approaches E in contrast to that of ~9 L, which is consistent with the Ru 3 d core-level shift indicating the reduction of the metallic conductivity. A power law g(ε) ∝ |ε - ε| well reproduces the observed spectral DOS of ~6 L and 1 L.

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Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBiTe) (BiTe) that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K.

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Local distortion in the conduction pathway has a significant influence on the conducting properties of oxides. The electronic states induced in the band gap of SrTiO3 by La doping were investigated using photoemission spectroscopy (PES) and soft X-ray emission spectroscopy (SXES); moreover, the local distortion in the conduction pathway was examined using extended X-ray absorption fine structure (EXAFS). An itinerant state and a localized state were observed as a metallic state and an in-gap state, respectively, in the PES spectra and as inelastic peaks in the SXES spectra.

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The peculiar metallic electronic states observed in the Kondo insulator, samarium hexaboride (SmB), has stimulated considerable attention among those studying non-trivial electronic phenomena. However, experimental studies of these states have led to controversial conclusions mainly due to the difficulty and inhomogeneity of the SmB crystal surface. Here, we show the detailed electronic structure of SmB with angle-resolved photoelectron spectroscopy measurements of the three-fold (111) surface where only two inequivalent time-reversal-invariant momenta (TRIM) exist.

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Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, a spin-1 chiral fermion and a double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively.

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Using high-resolution spin-resolved photoemission spectroscopy, we observe a thermal spin depolarization to which all spin-polarized electrons contribute. Furthermore, we observe a distinct minority spin state near the Fermi level and a corresponding depolarization that seldom contributes to demagnetization. The origin of this depolarization has been identified as the many-body effect characteristic of half-metallic ferromagnets.

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Since the first observation of the metal-to-insulator transition (MIT), VO has attracted substantial attention in terms of whether this transition is impelled by electron-phonon interaction (Peierls transition) or electron-electron interaction. Regarding Peierls transition, it has been theoretically predicted that the Fermi surface (FS) cross-section exhibits certain nesting features for a metallic phase of VO. Various experimental studies related to the nesting feature have been reported.

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Controlling quantum critical phenomena in strongly correlated electron systems, which emerge in the neighborhood of a quantum phase transition, is a major challenge in modern condensed matter physics. Quantum critical phenomena are generated from the delicate balance between long-range order and its quantum fluctuation. So far, the nature of quantum phase transitions has been investigated by changing a limited number of external parameters such as pressure and magnetic field.

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