Improvement in CPP-GMR read head sensor performance using [001]-oriented polycrystalline half-metallic Heusler alloy CoFeGaGe and CoFe bilayer electrode.

A current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) device with a half-metallic electrode is one of the most promising candidates of next-generation read head for hard disk drive. In this study, we fabricate [001]-oriented polycrystalline CPP-GMR devices with the normal ferromagnet (NFM) CoFe/half-metallic ferromagnet (HMFM) CoFeGaGe (CFGG) bilayer electrodes to enhance the magnetoresistance (MR) ratio by large interfacial spin-dependent scattering at the NFM/HMFM interface. The CoFe/CFGG bilayer electrode provides the additional large interfacial spin-dependent scattering and achieves high ratio of 22.

Magnetization switching of a perpendicular nanomagnet induced by vertical nonlocal injection of pure spin current.

Injection of pure spin current using a nonlocal geometry is a promising method for controlling magnetization in spintronic devices from the viewpoints of increasing freedom in device structure and avoiding problems related to charge current. Here, we report an experimental demonstration of magnetization switching of a perpendicular magnetic nanodot induced by vertical injection of pure spin current from a spin polarizer with perpendicular magnetization. In comparison with direct spin injection, the current amplitude required for magnetization switching is of the same order and shows smaller asymmetry between parallel-to-antiparallel and antiparallel-to-parallel switching.

Zero-dc-field rotation-direction-dependent magnetization switching induced by a circularly polarized microwave magnetic field.

Magnetization switching of high-anisotropy nanomagnets by a small magnetic field is a key challenge in developing future magnetic nanodevices. In this paper, we experimentally demonstrate magnetization switching of a perpendicularly magnetized nanomagnet induced solely by an in-plane circularly polarized microwave magnetic field. Applying a microwave field with an amplitude below 5% of the anisotropy field induces large ferromagnetic resonance excitation, which results in magnetization switching even in the absence of a dc field.

Nanoscale layer-selective readout of magnetization direction from a magnetic multilayer using a spin-torque oscillator.

Technology for detecting the magnetization direction of nanoscale magnetic material is crucial for realizing high-density magnetic recording devices. Conventionally, a magnetoresistive device is used that changes its resistivity in accordance with the direction of the stray field from an objective magnet. However, when several magnets are near such a device, the superposition of stray fields from all the magnets acts on the sensor, preventing selective recognition of their individual magnetization directions.