Publications by authors named "Hinze P"

The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been the focus of research over the past few years. However, besides the standard growth parameters, the influence of the substrate pretreatment and properties of the underlying SiC wafer are critical parameters for optimizing the quality of monolayer graphene on SiC. In this systematic study, we show how the surface properties and the pretreatment determine the quality of monolayer graphene using polymer-assisted sublimation growth (PASG) on SiC.

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The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually.

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We report on the fabrication of large-area all-carbon capacitors (ACCs) composed of multilayer stacks of carbon nanomembranes as dielectrics sandwiched between two carbon-based conducting electrodes. Carbon nanomembranes (CNMs) are prepared from aromatic self-assembled monolayers of phenylthiol homologues via electron irradiation. Two types of carbon-based electrode materials, (1) trilayer graphene made by chemical vapor deposition and mechanical stacking and (2) pyrolyzed graphitic carbon made by pyrolysis of cross-linked aromatic molecules, have been employed for this study.

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We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy.

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We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.

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Getting into films: semiconductor thin films containing magnetic or plasmonic metal nanoparticles are key materials for the development of high-efficiency solar cells, bright light-emitting diodes, and new magnetoelectric devices. The catalytically driven chemical vapor deposition offers a unique way to combine deposition of the metallic nanoparticles with that of functional oxides to produce such films.

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We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth.

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The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10(3) Ωcm.

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Despite the high density of threading dislocations generally found in (AlGaIn)N heterostructures, the light emission efficiency of such structures is exceptionally high. It has become common to attribute the high efficiency to compositional fluctuations or even phase separation in the active GaInN quantum well region. The resulting localization of charge carriers is thought to keep them from recombining nonradiatively at the defects.

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Primary pulmonary rhabdomyosarcoma is a rare entity and the histological differential diagnosis can be difficult. We report on a 43-year old female patient, smoker (25 pack-years), in whom a large solitary brain metastasis was diagnosed and enucleated. Histological examination revealed a typical small cell carcinoma and histological examination of biopsies obtained from a tumor in the left upper lobe of the lung was compatible with a small cell carcinoma.

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Aims: We report an example of malignant myoepithelioma of the vulva, which has not been hitherto described. We discuss the differential diagnosis and briefly review the literature.

Methods And Results: The lesion was found in an 81-year-old woman as an indolent 40 mm tumour.

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