Numerical investigation of side emission from large-area vertical-cavity surface-emitting lasers.

For large-area ion-implanted vertical-cavity surface-emitting lasers (VCSELs), side emission from the edges of a chip disturbs the laser emission of a VCSEL mode, and suppression of it is fundamental. In this paper, we present results of a numerical investigation of the side emission from large-area VCSELs. We have modeled a VCSEL structure by an infinitely broad layer structure with mirror loss at the edge surfaces.

High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture.

We report on GaAs-based high power density vertical-cavity surface-emitting laser diodes (VCSELs) with ion implanted isolated current apertures. A continuous-wave output power of over 380 mW and the power density of 4.9 kW/cm have been achieved at 15 °C from the 100-μm-diameter aperture, which is the highest output characteristic ever reported for an ion implanted VCSEL.

Two isocoumarins from Pleurospermum angelicoides.

Two new isocoumarins, angelicoins A and B, were isolated from the roots of Pleurospermum angelicoides, and their structures were established by spectral means.