As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic-inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CHNHI) and inorganic halide (B-site: PbI) powder targets to deposit repeated A/B bilayer films where the thickness of each layer was controlled on molecular layer scale by programming the evaporation IR laser pulse number, length, or power. The layer thickness was monitored with an quartz crystal microbalance and calibrated against stylus profilometer measurements.
View Article and Find Full Text PDFWe have developed a new laser heating system for thin film growth by chemical vapor deposition (CVD). A collimated beam from a high-power continuous-wave 808 nm semiconductor laser was directly introduced into a CVD growth chamber without an optical fiber. The light path of the heating laser inside the chamber was isolated mechanically from the growth area by bellows to protect the optics from film coating.
View Article and Find Full Text PDFIt has been experimentally shown that an O(-c)-polar ZnO surface is more stable than a Zn(+c)-polar surface in H(2) ambient. We applied first-principles calculations to investigating the polarity dependence on the stability at the electronic level. The calculations revealed that the -c surface terminated with H atom was stable maintaining a wurtzite structure, whereas the +c surface was unstable due to the change of coordination numbers of Zn at the topmost surface from four (wurtzite) to six (rock salt).
View Article and Find Full Text PDFEssentially atomically smooth (100) and (110) n-TiO(2) (rutile) surfaces were prepared by immersion of commercially available single-crystal wafers in 20% HF, followed by annealing at 600 degrees C in air. The obtained surfaces were stable in aqueous solutions of pH 1-13, showing no change in the surface morphology on an atomic level, contrary to atomically flat surfaces prepared by ion sputtering and annealing under UHV. The success in preparation of the atomically smooth and stable n-TiO(2) surfaces enabled us to reveal clear crystal-face dependences of the surface band edges and hole reactivity in aqueous solutions.
View Article and Find Full Text PDFAromatic ring-condensed TTF derivatives exhibited excellent p-type FET performances in thin films. Introduction of fused benzene and pyrazine rings to the TTF skeleton was effective to enhance the intermolecular interactions and stability to oxygen. Ordered molecular alignment was confirmed by XRD studies.
View Article and Find Full Text PDFThroughout history, scientists and engineers have relied on the slow and serendipitous trial-and-error process for discovering and developing new materials. In contrast, an emerging theme in modern materials science is the notion of intelligent design of materials. Pioneered by the pharmaceutical industry and adapted for the purposes of materials science and engineering, the combinatorial approach represents a watershed in the process of accelerated discovery, development and optimization of materials.
View Article and Find Full Text PDFFerromagnetic semiconductors are believed to be suitable for future spintronics, because both charge and spin degrees of freedom can be manipulated by external stimuli. One of the most important characteristics of ferromagnetic semiconductors is the anomalous Hall effect. This is because the ferromagnetically spin-polarized carrier can be probed and controlled electrically, leading to direct application for electronics.
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