Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance.

We have theoretically investigated the effects of random discrete distribution of implanted and annealed arsenic (As) atoms on device characteristics of silicon nanowire (Si NW) transistors. Kinetic Monte Carlo simulation is used for generating realistic random distribution of active As atoms in Si NWs. The active As distributions obtained through the kinetic Monte Carlo simulation are introduced into the source and drain extensions of n-type gate-all-around NW transistors.