Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching.

In order to further understand the excitation process of inductively coupled plasma (ICP) and improve the etching efficiency of silicon carbide (SiC), the effect of temperature and atmospheric pressure on plasma etching of silicon carbide was investigated. Based on the infrared temperature measurement method, the temperature of the plasma reaction region was measured. The single factor method was used to study the effect of the working gas flow rate and the RF power on the plasma region temperature.