Two-chip power-scalable THz-generating semiconductor disk laser.

We demonstrate a compact two-chip terahertz-emitting vertical-external-cavity surface-emitting laser source, which provides 1 THz output based on intracavity frequency conversion of dual-wavelength emission in a periodically poled lithium niobate crystal. The type-I frequency conversion scheme at room temperature highly benefits from the power-scaling possibilities in a multi-chip cavity with intracavity powers in excess of 500 W.

High-repetition-rate Q-switched fiber laser with high quality topological insulator Bi₂Se₃ film.

We demonstrated a high-repetition-rate Q-switched fiber laser with topological insulator Bi₂Se₃ absorber. The absorber was made into a film structure by spin-coating method using few-layer Bi₂Se₃ nano-platelets which had regular shape. The uniform film had a low saturable optical intensity of 11 MW/cm(2), which is the lowest saturable optical intensity in the saturable absorbers made by topological insulator till now.