Chemical Bath Deposition of ZnO/ZnGaO Core-Shell Nanowire Heterostructures Using Partial Chemical Conversion.

The development of innovative heterostructures made of ZnO nanowires is of great interest for enhancing the performances of many devices in the fields of optoelectronics, photovoltaics, and energy harvesting. We report an original fabrication process to form ZnO/ZnGaO core-shell nanowire heterostructures in the framework of the wet chemistry techniques. The process involves the partial chemical conversion of ZnO nanowires grown via chemical bath deposition into ZnO/ZnGaO core-shell nanowire heterostructures with a high interface quality following their immersion in an aqueous solution containing gallium nitrate heated at a low temperature.

Exploring the degradation of silver nanowire networks under thermal stress by coupling X-ray diffraction and electrical resistance measurements.

The thermal instability of silver nanowires (AgNWs) leads to a significant increase of the electrical resistance of AgNW networks. A better understanding of the relationship between the structural and electrical properties of AgNW networks is primordial for their efficient integration as transparent electrodes (TEs) for next-generation flexible optoelectronics. Herein, we investigate the evolution of the main crystallographic parameters ( integrated intensity, interplanar spacing and peak broadening) of two Ag-specific Bragg peaks, (111) and (200), during a thermal ramp up to 400 °C through X-ray diffraction (XRD) measurements, coupled with electrical resistance measurements on the same AgNW network.

Chemical Bath Deposition of α-GaOOH with Tunable Morphology on Silicon Using the pH Adjustment.

The growth of GaOOH by chemical bath deposition has received great attention over the past years as a first step to form GaO with the α- or β-phases by combining a wet chemical route with thermal annealing in air. By using gallium nitrate and sodium hydroxide in aqueous solution, we show that the structural morphology of GaOOH deposits is thoroughly tunable in terms of both dimensions, density, and nature by varying the initial pH value from acidic to basic conditions. In the low-pH region associated with a low supersaturation level and where Ga ions represent the dominant Ga(III) species, GaOOH microrods with a low aspect ratio and low density prevail.

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition.

The simultaneous co-doping of ZnO nanowires grown by chemical bath deposition is of high interest for a large number of engineering devices, but the process conditions required and the resulting physicochemical processes are still largely unknown. Herein, we show that the simultaneous co-doping of ZnO nanowires with Al and Ga following the addition of Al(NO) and Ga(NO) in the chemical bath operates in a narrow range of conditions in the high-pH region, where the adsorption processes of respective Al(OH) and Ga(OH) complexes on the positively charged -plane sidewalls are driven by attractive electrostatic forces. The structural morphology and properties of ZnO nanowires are significantly affected by the co-doping and mainly governed by the effect of Al(III) species.

Optimization of the SbS Shell Thickness in ZnO Nanowire-Based Extremely Thin Absorber Solar Cells.

Extremely thin absorber (ETA) solar cells made of ZnO/TiO/SbS core-shell nanowire heterostructures, using P3HT as the hole-transporting material (HTM), are of high interest to surpass solar cell efficiencies of their planar counterpart at lower material cost. However, no dimensional optimization has been addressed in detail, as it raises material and technological critical issues. In this study, the thickness of the SbS shell grown by chemical spray pyrolysis is tuned from a couple of nanometers to several tens of nanometers, while switching from a partially to a fully crystallized shell.

Chemical Bath Deposition of ZnO Nanowires Using Copper Nitrate as an Additive for Compensating Doping.

The controlled incorporation of dopants like copper into ZnO nanowires (NWs) grown by chemical bath deposition (CBD) is still challenging despite its critical importance for the development of piezoelectric devices. In this context, the effects of the addition of copper nitrate during the CBD of ZnO NWs grown on Au seed layers are investigated in detail, where zinc nitrate and hexamethylenetetramine are used as standard chemical precursors and ammonia as an additive to tune the pH. By combining thermodynamic simulations with chemical and structural analyses, we show that copper oxide nanocrystals simultaneously form with ZnO NWs during the CBD process in the low-pH region associated with large supersaturation of Cu species.

Chemical Synthesis of β-GaO Microrods on Silicon and Its Dependence on the Gallium Nitrate Concentration.

β-GaO microrods have attracted increasing attention for their integration into solar blind/UV photodetectors and gas sensors. However, their synthesis using a low-temperature chemical route in aqueous solution is still under development, and the physicochemical processes at work have not yet been elucidated. Here, we develop a double-step process involving the growth of α-GaOOH microrods on silicon using chemical bath deposition and their further structural conversion to β-GaO microrods by postdeposition thermal treatment.

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses.

ZnO thin films and nanostructures have received increasing interest in the field of piezoelectricity over the last decade, but their formation mechanisms on silicon when using pulsed-liquid injection metal-organic chemical vapor deposition (PLI-MOCVD) are still open to a large extent. Also, the effects of their morphology, dimensions, polarity, and electrical properties on their piezoelectric properties have not been completely decoupled yet. By only tuning the growth temperature from 400 to 750 °C while fixing the other growth conditions, the morphology transition of ZnO deposits on silicon from stacked thin films to nanowires through columnar thin films is shown.

Electrical Properties of Low-Temperature Processed Sn-Doped InO Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping.

Low-temperature-processed ITO thin films offer the potential of overcoming the doping limit by suppressing the equilibrium of compensating oxygen interstitial defects. To elucidate this potential, electrical properties of Sn-doped In 2 O 3 (ITO) thin films are studied in dependence on film thickness. In-operando conductivity and Hall effect measurements during annealing of room-temperature-deposited films, together with different film thickness in different environments, allow to discriminate between the effects of crystallization, grain growth, donor activation and oxygen diffusion on carrier concentrations and mobilities.

Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications.

ZnO nanowires are considered as attractive building blocks for piezoelectric devices, including nano-generators and stress/strain sensors. However, their integration requires the use of metallic seed layers, on top of which the formation mechanisms of ZnO nanowires by chemical bath deposition are still largely open. In order to tackle that issue, the nucleation and growth mechanisms of ZnO nanowires on top of Au seed layers with a thickness in the range of 5-100 nm are thoroughly investigated.

Integration of LaMnO films on platinized silicon substrates for resistive switching applications by PI-MOCVD.

The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response.

Well-ordered ZnO nanowires with controllable inclination on semipolar ZnO surfaces by chemical bath deposition.

Controlling the formation of ZnO nanowire (NW) arrays on a wide variety of substrates is crucial for their efficient integration into nanoscale devices. While their nucleation and growth by chemical bath deposition (CBD) have intensively been investigated on non-polar and polar c-plane ZnO surfaces, their formation on alternatively oriented ZnO surfaces has not been addressed yet. In this work, the standard CBD technique of ZnO is investigated on [Formula: see text] and [Formula: see text] semipolar ZnO single crystal surfaces.

The initial stages of ZnO atomic layer deposition on atomically flat InGaAs substrates.

InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest.

Exploring the optical properties of Vernier phase yttrium oxyfluoride thin films grown by pulsed liquid injection MOCVD.

In this work, we report on the first successful deposition of Vernier phase yttrium oxyfluoride (V-YOF) thin films on Si (100) wafers using pulsed liquid injection metal organic chemical vapor deposition (PLI-MOCVD). The formation of V-YOF has been confirmed by X-ray diffraction measurements and electron probe microanalysis. The infrared phonon modes of V-YOF thin films and their corresponding optical constants as inferred from spectroscopic ellipsometry are reported here for the first time.

The quest towards epitaxial BaMgF thin films: exploring MOCVD as a chemical scalable approach for the deposition of complex metal fluoride films.

Conventional and Pulsed Liquid Injection MOCVD processes (C-MOCVD and PLI-MOCVD) have been explored as synthetic routes for the growth of BaMgF on Si (100) and single crystalline SrTiO (100) substrates. For the two applied approaches, the volatile, thermally stable β-diketonate complexes Ba(hfa)tetraglyme and Mg(hfa)(diglyme)(HO) have been used as single precursors (C-MOCVD) or as a solution multimetal source (PLI-MOCVD). Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial BaMgF films on SrTiO substrates.

Identifying and mapping the polytypes and orientation relationships in ZnO/CdSe core-shell nanowire arrays.

Identifying and mapping the crystalline phases and orientation relationships on the local scale in core-shell ZnO nanowire heterostructures are of primary importance to improve the interface quality, which governs the performances of the nanoscale devices. However, this represents a major difficulty, especially when the expected polytypes exhibit very similar properties as in the case of CdSe. In the present work, we address that issue in ZnO nanowire heterostructures involving a uniform and highly conformal CdSe shell grown by molecular beam epitaxy.

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires.

The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic.